Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.
Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort AT, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S.
Heilmann M, et al. Among authors: van helvoort at.
Nano Lett. 2016 Jun 8;16(6):3524-32. doi: 10.1021/acs.nanolett.6b00484. Epub 2016 May 3.
Nano Lett. 2016.
PMID: 27124605