Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts

Dasa L Dheeraj; Gilles Patriarche; Hailong Zhou; Thang B Hoang; Anthonysamy F Moses; Sondre Grønsberg; Antonius T J van Helvoort; Bjørn-Ove Fimland; Helge Weman

doi:10.1021/nl802406d

Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts

Nano Lett. 2008 Dec;8(12):4459-63. doi: 10.1021/nl802406d.

Authors

Dasa L Dheeraj¹, Gilles Patriarche, Hailong Zhou, Thang B Hoang, Anthonysamy F Moses, Sondre Grønsberg, Antonius T J van Helvoort, Bjørn-Ove Fimland, Helge Weman

Affiliation

¹ Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway.

PMID: 19367852
DOI: 10.1021/nl802406d

Abstract

We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature microphotoluminescence (micro-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.