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Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.
Nano Lett. 2010 Aug 11;10(8):2927-33. doi: 10.1021/nl101087e.
Nano Lett. 2010.
PMID: 20604543
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.
Dheeraj DL, et al. Among authors: moses af.
Nano Lett. 2008 Dec;8(12):4459-63. doi: 10.1021/nl802406d.
Nano Lett. 2008.
PMID: 19367852
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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires.
Todorovic J, Moses AF, Karlberg T, Olk P, Dheeraj DL, Fimland BO, Weman H, van Helvoort AT.
Todorovic J, et al. Among authors: moses af.
Nanotechnology. 2011 Aug 12;22(32):325707. doi: 10.1088/0957-4484/22/32/325707. Epub 2011 Jul 20.
Nanotechnology. 2011.
PMID: 21775779
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