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Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12774-80. doi: 10.1021/acsami.5b01600. Epub 2015 Jun 2.
ACS Appl Mater Interfaces. 2015.
PMID: 25988586
Silicon interfacial passivation layer chemistry for high-k/InP interfaces.
Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM.
Dong H, et al.
ACS Appl Mater Interfaces. 2014 May 28;6(10):7340-5. doi: 10.1021/am500752u. Epub 2014 Apr 30.
ACS Appl Mater Interfaces. 2014.
PMID: 24750024
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