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Symmetry Engineering in Twisted Bilayer WTe2.
Zhang Y, Kamiya K, Yamamoto T, Sakano M, Yang X, Masubuchi S, Okazaki S, Shinokita K, Chen T, Aso K, Yamada-Takamura Y, Oshima Y, Watanabe K, Taniguchi T, Matsuda K, Sasagawa T, Ishizaka K, Machida T. Zhang Y, et al. Nano Lett. 2023 Oct 25;23(20):9280-9286. doi: 10.1021/acs.nanolett.3c02327. Epub 2023 Oct 9. Nano Lett. 2023. PMID: 37811843
Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry.
Suzuki R, Sakano M, Zhang YJ, Akashi R, Morikawa D, Harasawa A, Yaji K, Kuroda K, Miyamoto K, Okuda T, Ishizaka K, Arita R, Iwasa Y. Suzuki R, et al. Among authors: zhang yj. Nat Nanotechnol. 2014 Aug;9(8):611-7. doi: 10.1038/nnano.2014.148. Epub 2014 Jul 27. Nat Nanotechnol. 2014. PMID: 25064393
Extended Polymorphism of Two-Dimensional Material.
Yoshida M, Ye J, Zhang Y, Imai Y, Kimura S, Fujiwara A, Nishizaki T, Kobayashi N, Nakano M, Iwasa Y. Yoshida M, et al. Among authors: zhang y. Nano Lett. 2017 Sep 13;17(9):5567-5571. doi: 10.1021/acs.nanolett.7b02374. Epub 2017 Aug 11. Nano Lett. 2017. PMID: 28777578
Ambipolar MoS2 thin flake transistors.
Zhang Y, Ye J, Matsuhashi Y, Iwasa Y. Zhang Y, et al. Nano Lett. 2012 Mar 14;12(3):1136-40. doi: 10.1021/nl2021575. Epub 2012 Feb 10. Nano Lett. 2012. PMID: 22276648
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