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Schottky Barriers in Bilayer Phosphorene Transistors.
Pan Y, Dan Y, Wang Y, Ye M, Zhang H, Quhe R, Zhang X, Li J, Guo W, Yang L, Lu J. Pan Y, et al. Among authors: zhang h, zhang x. ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12694-12705. doi: 10.1021/acsami.6b16826. Epub 2017 Mar 30. ACS Appl Mater Interfaces. 2017. PMID: 28322554
Electrical Contacts in Monolayer Arsenene Devices.
Wang Y, Ye M, Weng M, Li J, Zhang X, Zhang H, Guo Y, Pan Y, Xiao L, Liu J, Pan F, Lu J. Wang Y, et al. Among authors: zhang x, zhang h. ACS Appl Mater Interfaces. 2017 Aug 30;9(34):29273-29284. doi: 10.1021/acsami.7b08513. Epub 2017 Aug 21. ACS Appl Mater Interfaces. 2017. PMID: 28783298
Monolayer Bismuthene-Metal Contacts: A Theoretical Study.
Guo Y, Pan F, Ye M, Sun X, Wang Y, Li J, Zhang X, Zhang H, Pan Y, Song Z, Yang J, Lu J. Guo Y, et al. Among authors: zhang x, zhang h. ACS Appl Mater Interfaces. 2017 Jul 12;9(27):23128-23140. doi: 10.1021/acsami.7b03833. Epub 2017 Jun 26. ACS Appl Mater Interfaces. 2017. PMID: 28597660
Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi J, Pan F, Lu J. Wang Y, et al. Among authors: zhang h, zhang x. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23344-23352. doi: 10.1021/acsami.8b06427. Epub 2018 Jun 27. ACS Appl Mater Interfaces. 2018. PMID: 29916240
n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.
Guo Y , Pan F , Ren Y , Yao B , Yang C , Ye M , Wang Y , Li J , Zhang X , Yan J , Yang J , Lu J . Guo Y , et al. Among authors: zhang x. Phys Chem Chem Phys. 2018 Oct 7;20(37):24239-24249. doi: 10.1039/c8cp04759f. Epub 2018 Sep 13. Phys Chem Chem Phys. 2018. PMID: 30209481
168,490 results
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