Zhang H - Search Results

1

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Wang Y, et al. Among authors: zhang z, zhang x, zhang h. Rep Prog Phys. 2021 Apr 27;84(5). doi: 10.1088/1361-6633/abf1d4. Rep Prog Phys. 2021. PMID: 33761489 Review.

2

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Zhang H, Ye M, Wang Y, Quhe R, Pan Y, Guo Y, Song Z, Yang J, Guo W, Lu J. Zhang H, et al. Phys Chem Chem Phys. 2016 Jun 28;18(24):16367-76. doi: 10.1039/c6cp01866a. Epub 2016 Jun 3. Phys Chem Chem Phys. 2016. PMID: 27257639

3

Does the Dirac cone of germanene exist on metal substrates?

Wang Y, Li J, Xiong J, Pan Y, Ye M, Guo Y, Zhang H, Quhe R, Lu J. Wang Y, et al. Among authors: zhang h. Phys Chem Chem Phys. 2016 Jul 28;18(28):19451-6. doi: 10.1039/c6cp03040h. Epub 2016 Jul 5. Phys Chem Chem Phys. 2016. PMID: 27411084

4

Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?

Quhe R, Peng X, Pan Y, Ye M, Wang Y, Zhang H, Feng S, Zhang Q, Shi J, Yang J, Yu D, Lei M, Lu J. Quhe R, et al. Among authors: zhang q, zhang h. ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3959-3966. doi: 10.1021/acsami.6b14699. Epub 2017 Jan 23. ACS Appl Mater Interfaces. 2017. PMID: 28068757

5

Schottky Barriers in Bilayer Phosphorene Transistors.

Pan Y, Dan Y, Wang Y, Ye M, Zhang H, Quhe R, Zhang X, Li J, Guo W, Yang L, Lu J. Pan Y, et al. Among authors: zhang h, zhang x. ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12694-12705. doi: 10.1021/acsami.6b16826. Epub 2017 Mar 30. ACS Appl Mater Interfaces. 2017. PMID: 28322554

6

Monolayer Bismuthene-Metal Contacts: A Theoretical Study.

Guo Y, Pan F, Ye M, Sun X, Wang Y, Li J, Zhang X, Zhang H, Pan Y, Song Z, Yang J, Lu J. Guo Y, et al. Among authors: zhang x, zhang h. ACS Appl Mater Interfaces. 2017 Jul 12;9(27):23128-23140. doi: 10.1021/acsami.7b03833. Epub 2017 Jun 26. ACS Appl Mater Interfaces. 2017. PMID: 28597660

7

Electrical Contacts in Monolayer Arsenene Devices.

Wang Y, Ye M, Weng M, Li J, Zhang X, Zhang H, Guo Y, Pan Y, Xiao L, Liu J, Pan F, Lu J. Wang Y, et al. Among authors: zhang x, zhang h. ACS Appl Mater Interfaces. 2017 Aug 30;9(34):29273-29284. doi: 10.1021/acsami.7b08513. Epub 2017 Aug 21. ACS Appl Mater Interfaces. 2017. PMID: 28783298

8

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi J, Pan F, Lu J. Wang Y, et al. Among authors: zhang h, zhang x. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23344-23352. doi: 10.1021/acsami.8b06427. Epub 2018 Jun 27. ACS Appl Mater Interfaces. 2018. PMID: 29916240

9

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors.

Shi B , Wang Y , Li J , Zhang X , Yan J , Liu S , Yang J , Pan Y , Zhang H , Yang J , Pan F , Lu J . Shi B , et al. Among authors: zhang x, zhang h. Phys Chem Chem Phys. 2018 Oct 3;20(38):24641-24651. doi: 10.1039/c8cp04615h. Phys Chem Chem Phys. 2018. PMID: 30238940

10

First-principles simulation of monolayer hydrogen passivated Bi₂O₂S₂-metal interfaces.

Xu L, Liu S, Zhang H, Zhang X, Li J, Yan J, Shi B, Yang J, Yang C, Xu L, Sun X, Lu J. Xu L, et al. Among authors: zhang h, zhang x. Phys Chem Chem Phys. 2020 Apr 15;22(15):7853-7863. doi: 10.1039/d0cp00058b. Phys Chem Chem Phys. 2020. PMID: 32227028

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