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Year | Number of Results |
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2020 | 2 |
2023 | 1 |
2024 | 0 |
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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
Nanomaterials (Basel). 2023 Feb 27;13(5):898. doi: 10.3390/nano13050898.
Nanomaterials (Basel). 2023.
PMID: 36903774
Free PMC article.
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
Chang SJ, Kim DS, Kim TW, Lee JH, Bae Y, Jung HW, Kang SC, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Chang SJ, et al. Among authors: noh ys.
Nanomaterials (Basel). 2020 Oct 30;10(11):2175. doi: 10.3390/nano10112175.
Nanomaterials (Basel). 2020.
PMID: 33143313
Free PMC article.
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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
Kang SC, Jung HW, Chang SJ, Kim SM, Lee SK, Lee BH, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Kang SC, et al. Among authors: noh ys.
Nanomaterials (Basel). 2020 Oct 24;10(11):2116. doi: 10.3390/nano10112116.
Nanomaterials (Basel). 2020.
PMID: 33114425
Free PMC article.
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