Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors.
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Lee Y, et al. Among authors: yoo c, yoo h.
ACS Appl Mater Interfaces. 2021 May 5;13(17):20349-20360. doi: 10.1021/acsami.1c02597. Epub 2021 Apr 5.
ACS Appl Mater Interfaces. 2021.
PMID: 33818057