Ye PD - Search Results

1

Review-Extremely Thin Amorphous Indium Oxide Transistors.

Charnas A, Zhang Z, Lin Z, Zheng D, Zhang J, Si M, Ye PD. Charnas A, et al. Among authors: ye pd. Adv Mater. 2024 Mar;36(9):e2304044. doi: 10.1002/adma.202304044. Epub 2023 Dec 8. Adv Mater. 2024. PMID: 37957006 Review.

2

Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes.

Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Kim S, et al. Among authors: ye pd. Adv Mater. 2009 Feb 2;21(5):564-8. doi: 10.1002/adma.200801032. Adv Mater. 2009. PMID: 21161982 No abstract available.

3

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Liu H, et al. Among authors: ye pd. Nano Lett. 2013 Jun 12;13(6):2640-6. doi: 10.1021/nl400778q. Epub 2013 May 20. Nano Lett. 2013. PMID: 23679044

4

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Liu H, et al. Among authors: ye pd. ACS Nano. 2014 Jan 28;8(1):1031-8. doi: 10.1021/nn405916t. Epub 2013 Dec 23. ACS Nano. 2014. PMID: 24351134

5

Performance potential and limit of MoS2 transistors.

Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Li X, et al. Adv Mater. 2015 Mar 4;27(9):1547-52. doi: 10.1002/adma.201405068. Epub 2015 Jan 13. Adv Mater. 2015. PMID: 25586919

6

Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.

Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Li X, et al. Nanoscale. 2016 Feb 14;8(6):3572-8. doi: 10.1039/c5nr06647f. Epub 2016 Jan 25. Nanoscale. 2016. PMID: 26806878

7

Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe₅.

Qiu G, Du Y, Charnas A, Zhou H, Jin S, Luo Z, Zemlyanov DY, Xu X, Cheng GJ, Ye PD. Qiu G, et al. Among authors: ye pd. Nano Lett. 2016 Dec 14;16(12):7364-7369. doi: 10.1021/acs.nanolett.6b02629. Epub 2016 Nov 29. Nano Lett. 2016. PMID: 27960486

8

One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport.

Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. Du Y, et al. Among authors: ye pd. Nano Lett. 2017 Jun 14;17(6):3965-3973. doi: 10.1021/acs.nanolett.7b01717. Epub 2017 Jun 2. Nano Lett. 2017. PMID: 28562056

9

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications.

Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Qin J, et al. Among authors: ye pd. ACS Nano. 2017 Oct 24;11(10):10222-10229. doi: 10.1021/acsnano.7b04786. Epub 2017 Sep 28. ACS Nano. 2017. PMID: 28949510

10

Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance.

Chang HM, Charnas A, Lin YM, Ye PD, Wu CI, Wu CH. Chang HM, et al. Among authors: ye pd. Sci Rep. 2017 Dec 4;7(1):16857. doi: 10.1038/s41598-017-16845-w. Sci Rep. 2017. PMID: 29203831 Free PMC article.

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