Yang SH - Search Results

1

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Li M, Lin CY, Yang SH, Chang YM, Chang JK, Yang FS, Zhong C, Jian WB, Lien CH, Ho CH, Liu HJ, Huang R, Li W, Lin YF, Chu J. Li M, et al. Among authors: yang sh, yang fs. Adv Mater. 2018 Nov;30(44):e1803690. doi: 10.1002/adma.201803690. Epub 2018 Sep 14. Adv Mater. 2018. PMID: 30589465

2

Reversible and Precisely Controllable p/n-Type Doping of MoTe₂ Transistors through Electrothermal Doping.

Chang YM, Yang SH, Lin CY, Chen CH, Lien CH, Jian WB, Ueno K, Suen YW, Tsukagoshi K, Lin YF. Chang YM, et al. Among authors: yang sh. Adv Mater. 2018 Mar;30(13):e1706995. doi: 10.1002/adma.201706995. Epub 2018 Feb 12. Adv Mater. 2018. PMID: 29430746

3

Multilayer Graphene-WSe₂ Heterostructures for WSe₂ Transistors.

Tang HL, Chiu MH, Tseng CC, Yang SH, Hou KJ, Wei SY, Huang JK, Lin YF, Lien CH, Li LJ. Tang HL, et al. Among authors: yang sh. ACS Nano. 2017 Dec 26;11(12):12817-12823. doi: 10.1021/acsnano.7b07755. Epub 2017 Dec 1. ACS Nano. 2017. PMID: 29182852

4

Atomically thin van der Waals tunnel field-effect transistors and its potential for applications.

Yang SH, Yao YT, Xu Y, Lin CY, Chang YM, Suen YW, Sun H, Lien CH, Li W, Lin YF. Yang SH, et al. Nanotechnology. 2019 Mar 8;30(10):105201. doi: 10.1088/1361-6528/aaf765. Epub 2018 Dec 10. Nanotechnology. 2019. PMID: 30530943

5

A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications.

Lin CY, Chen CF, Chang YM, Yang SH, Lee KC, Wu WW, Jian WB, Lin YF. Lin CY, et al. Among authors: yang sh. Small. 2019 Aug;15(33):e1900865. doi: 10.1002/smll.201900865. Epub 2019 Jul 2. Small. 2019. PMID: 31264786

6

Oxygen-Sensitive Layered MoTe₂ Channels for Environmental Detection.

Yang SH, Lin CY, Chang YM, Li M, Lee KC, Chen CF, Yang FS, Lien CH, Ueno K, Watanabe K, Taniguchi T, Tsukagoshi K, Lin YF. Yang SH, et al. Among authors: yang fs. ACS Appl Mater Interfaces. 2019 Dec 18;11(50):47047-47053. doi: 10.1021/acsami.9b15036. Epub 2019 Dec 4. ACS Appl Mater Interfaces. 2019. PMID: 31746187

7

Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts.

Li J, Lee KC, Hsieh MH, Yang SH, Chang YM, Chang JK, Lin CY, Lin YF. Li J, et al. Among authors: yang sh. Sci Rep. 2019 Dec 27;9(1):20087. doi: 10.1038/s41598-019-56576-8. Sci Rep. 2019. PMID: 31882987 Free PMC article.

8

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features.

Yang FS, Li M, Lee MP, Ho IY, Chen JY, Ling H, Li Y, Chang JK, Yang SH, Chang YM, Lee KC, Chou YC, Ho CH, Li W, Lien CH, Lin YF. Yang FS, et al. Among authors: yang sh. Nat Commun. 2020 Jun 12;11(1):2972. doi: 10.1038/s41467-020-16766-9. Nat Commun. 2020. PMID: 32532980 Free PMC article.

9

Facile and Reversible Carrier-Type Manipulation of Layered MoTe₂ Toward Long-Term Stable Electronics.

Li M, Lin CY, Chang YM, Yang SH, Lee MP, Chen CF, Lee KC, Yang FS, Chou Y, Lin YC, Ueno K, Shi Y, Chou YC, Tsukagoshi K, Lin YF. Li M, et al. Among authors: yang sh, yang fs. ACS Appl Mater Interfaces. 2020 Sep 23;12(38):42918-42924. doi: 10.1021/acsami.0c09922. Epub 2020 Sep 14. ACS Appl Mater Interfaces. 2020. PMID: 32864950

10

Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures.

Chen CF, Yang SH, Lin CY, Lee MP, Tsai MY, Yang FS, Chang YM, Li M, Lee KC, Ueno K, Shi Y, Lien CH, Wu WW, Chiu PW, Li W, Lo ST, Lin YF. Chen CF, et al. Among authors: yang sh, yang fs. Adv Sci (Weinh). 2022 Aug;9(24):e2106016. doi: 10.1002/advs.202106016. Epub 2022 Jul 13. Adv Sci (Weinh). 2022. PMID: 35831244 Free PMC article.

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