Yang JJ - Search Results

1

Direct identification of the conducting channels in a functioning memristive device.

Strachan JP, Pickett MD, Yang JJ, Aloni S, David Kilcoyne AL, Medeiros-Ribeiro G, Stanley Williams R. Strachan JP, et al. Among authors: yang jj. Adv Mater. 2010 Aug 24;22(32):3573-7. doi: 10.1002/adma.201000186. Adv Mater. 2010. PMID: 20512814 No abstract available.

2

Memristive switching mechanism for metal/oxide/metal nanodevices.

Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Yang JJ, et al. Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15. Nat Nanotechnol. 2008. PMID: 18654568

3

Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

Xia Q, Robinett W, Cumbie MW, Banerjee N, Cardinali TJ, Yang JJ, Wu W, Li X, Tong WM, Strukov DB, Snider GS, Medeiros-Ribeiro G, Williams RS. Xia Q, et al. Among authors: yang jj. Nano Lett. 2009 Oct;9(10):3640-5. doi: 10.1021/nl901874j. Nano Lett. 2009. PMID: 19722537

4

Diffusion of adhesion layer metals controls nanoscale memristive switching.

Yang JJ, Strachan JP, Xia Q, Ohlberg DA, Kuekes PJ, Kelley RD, Stickle WF, Stewart DR, Medeiros-Ribeiro G, Williams RS. Yang JJ, et al. Adv Mater. 2010 Sep 22;22(36):4034-8. doi: 10.1002/adma.201000663. Adv Mater. 2010. PMID: 20677188 No abstract available.

5

Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system.

Pickett MD, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. Pickett MD, et al. Among authors: yang jj. Adv Mater. 2011 Apr 19;23(15):1730-3. doi: 10.1002/adma.201004497. Epub 2011 Feb 22. Adv Mater. 2011. PMID: 21491505 No abstract available.

6

The switching location of a bipolar memristor: chemical, thermal and structural mapping.

Strachan JP, Strukov DB, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. Strachan JP, et al. Among authors: yang jj. Nanotechnology. 2011 Jun 24;22(25):254015. doi: 10.1088/0957-4484/22/25/254015. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572186

7

Impact of geometry on the performance of memristive nanodevices.

Xia Q, Pickett MD, Yang JJ, Zhang MX, Borghetti J, Li X, Wu W, Medeiros-Ribeiro G, Williams RS. Xia Q, et al. Among authors: yang jj. Nanotechnology. 2011 Jun 24;22(25):254026. doi: 10.1088/0957-4484/22/25/254026. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572201

8

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS. Miao F, et al. Among authors: yang jj. Adv Mater. 2011 Dec 15;23(47):5633-40. doi: 10.1002/adma.201103379. Epub 2011 Nov 8. Adv Mater. 2011. PMID: 22065427

9

Continuous electrical tuning of the chemical composition of TaO(x)-based memristors.

Miao F, Yi W, Goldfarb I, Yang JJ, Zhang MX, Pickett MD, Strachan JP, Medeiros-Ribeiro G, Williams RS. Miao F, et al. Among authors: yang jj. ACS Nano. 2012 Mar 27;6(3):2312-8. doi: 10.1021/nn2044577. Epub 2012 Feb 16. ACS Nano. 2012. PMID: 22324891

10

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS. Choi BJ, et al. Among authors: yang jj. Nano Lett. 2013 Jul 10;13(7):3213-7. doi: 10.1021/nl401283q. Epub 2013 Jun 12. Nano Lett. 2013. PMID: 23746124

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