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2020 | 1 |
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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode.
Micromachines (Basel). 2022 May 9;13(5):748. doi: 10.3390/mi13050748.
Micromachines (Basel). 2022.
PMID: 35630215
Free PMC article.
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z.
Zhang H, et al. Among authors: kang x.
Micromachines (Basel). 2021 Oct 22;12(11):1296. doi: 10.3390/mi12111296.
Micromachines (Basel). 2021.
PMID: 34832708
Free PMC article.
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics.
Sun Y, Kang X, Zheng Y, Wei K, Li P, Wang W, Liu X, Zhang G.
Sun Y, et al. Among authors: kang x.
Nanomaterials (Basel). 2020 Apr 1;10(4):657. doi: 10.3390/nano10040657.
Nanomaterials (Basel). 2020.
PMID: 32244713
Free PMC article.
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Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.
Liu X, Wang X, Zhang Y, Wei K, Zheng Y, Kang X, Jiang H, Li J, Wang W, Wu X, Wang X, Huang S.
Liu X, et al. Among authors: kang x.
ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21721-21729. doi: 10.1021/acsami.8b04694. Epub 2018 Jun 12.
ACS Appl Mater Interfaces. 2018.
PMID: 29863840
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