Xu L - Search Results

1

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Wang Y, et al. Among authors: xu l. Rep Prog Phys. 2021 Apr 27;84(5). doi: 10.1088/1361-6633/abf1d4. Rep Prog Phys. 2021. PMID: 33761489 Review.

2

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches.

Qiu C, Liu F, Xu L, Deng B, Xiao M, Si J, Lin L, Zhang Z, Wang J, Guo H, Peng H, Peng LM. Qiu C, et al. Among authors: xu l. Science. 2018 Jul 27;361(6400):387-392. doi: 10.1126/science.aap9195. Epub 2018 Jun 14. Science. 2018. PMID: 29903885

3

Sub-5 nm monolayer black phosphorene tunneling transistors.

Li H, Shi B, Pan Y, Li J, Xu L, Xu L, Zhang Z, Pan F, Lu J. Li H, et al. Among authors: xu l. Nanotechnology. 2018 Nov 30;29(48):485202. doi: 10.1088/1361-6528/aae0cb. Epub 2018 Sep 12. Nanotechnology. 2018. PMID: 30207546

4

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart.

Sun X, Xu L, Zhang Y, Wang W, Liu S, Yang C, Zhang Z, Lu J. Sun X, et al. Among authors: xu l. ACS Appl Mater Interfaces. 2020 May 6;12(18):20633-20644. doi: 10.1021/acsami.0c01750. Epub 2020 Apr 21. ACS Appl Mater Interfaces. 2020. PMID: 32285659

5

Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?

Liu S, Yang J, Xu L, Li J, Yang C, Li Y, Shi B, Pan Y, Xu L, Ma J, Yang J, Lu J. Liu S, et al. Among authors: xu l. Nanoscale. 2021 Mar 18;13(10):5536-5544. doi: 10.1039/d0nr09094h. Nanoscale. 2021. PMID: 33688887

6

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Xu L, Yang J, Qiu C, Liu S, Zhou W, Li Q, Shi B, Ma J, Yang C, Lu J, Zhang Z. Xu L, et al. ACS Appl Mater Interfaces. 2021 Jul 14;13(27):31957-31967. doi: 10.1021/acsami.1c05229. Epub 2021 Jul 2. ACS Appl Mater Interfaces. 2021. PMID: 34210135

7

Performance Limit of Ultrathin GaAs Transistors.

Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Li Q, et al. Among authors: xu l. ACS Appl Mater Interfaces. 2022 May 16. doi: 10.1021/acsami.2c01134. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 35575689

8

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.

Liu C, Cao Y, Wang B, Zhang Z, Lin Y, Xu L, Yang Y, Jin C, Peng LM, Zhang Z. Liu C, et al. Among authors: xu l. ACS Nano. 2022 Dec 27;16(12):21482-21490. doi: 10.1021/acsnano.2c10007. Epub 2022 Nov 23. ACS Nano. 2022. PMID: 36416375

9

Ballistic two-dimensional InSe transistors.

Jiang J, Xu L, Qiu C, Peng LM. Jiang J, et al. Among authors: xu l. Nature. 2023 Apr;616(7957):470-475. doi: 10.1038/s41586-023-05819-w. Epub 2023 Mar 22. Nature. 2023. PMID: 36949203

10

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics.

Liu L, Han J, Xu L, Zhou J, Zhao C, Ding S, Shi H, Xiao M, Ding L, Ma Z, Jin C, Zhang Z, Peng LM. Liu L, et al. Among authors: xu l. Science. 2020 May 22;368(6493):850-856. doi: 10.1126/science.aba5980. Science. 2020. PMID: 32439787

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