Whang D - Search Results

1

Layer-engineered large-area exfoliation of graphene.

Moon JY, Kim M, Kim SI, Xu S, Choi JH, Whang D, Watanabe K, Taniguchi T, Park DS, Seo J, Cho SH, Son SK, Lee JH. Moon JY, et al. Among authors: whang d. Sci Adv. 2020 Oct 28;6(44):eabc6601. doi: 10.1126/sciadv.abc6601. Print 2020 Oct. Sci Adv. 2020. PMID: 33115746 Free PMC article.

2

Catalyst-free growth of single-crystal silicon and germanium nanowires.

Kim BS, Koo TW, Lee JH, Kim DS, Jung YC, Hwang SW, Choi BL, Lee EK, Kim JM, Whang D. Kim BS, et al. Among authors: whang d. Nano Lett. 2009 Feb;9(2):864-9. doi: 10.1021/nl803752w. Nano Lett. 2009. PMID: 19159250

3

Large-scale solution-phase growth of Cu-doped ZnO nanowire networks.

Xu C, Koo TW, Kim BS, Lee JH, Hwang SW, Whang D. Xu C, et al. Among authors: whang d. J Nanosci Nanotechnol. 2011 Jul;11(7):6062-6. doi: 10.1166/jnn.2011.4414. J Nanosci Nanotechnol. 2011. PMID: 22121658

4

Metastable Ge1-xCx alloy nanowires.

Kim BS, Lee JH, Son K, Hwang SW, Choi BL, Lee EK, Kim JM, Whang D. Kim BS, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2012 Feb;4(2):805-10. doi: 10.1021/am201446u. Epub 2012 Jan 17. ACS Appl Mater Interfaces. 2012. PMID: 22201458

5

Morphology control of self-catalyzed germanium nanostructures with graphitic carbon shell.

Kim BS, Lee JH, Son K, Hwang SW, Choi BL, Lee EK, Whang D. Kim BS, et al. Among authors: whang d. J Nanosci Nanotechnol. 2012 May;12(5):4103-7. doi: 10.1166/jnn.2012.6427. J Nanosci Nanotechnol. 2012. PMID: 22852353

6

A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.

Lee JH, Kim BS, Choi SH, Jang Y, Hwang SW, Whang D. Lee JH, et al. Among authors: whang d. Nanoscale. 2013 Oct 7;5(19):8968-72. doi: 10.1039/c3nr02552g. Epub 2013 Aug 22. Nanoscale. 2013. PMID: 23969942

7

Large-scale fabrication of 2-D nanoporous graphene using a thin anodic aluminum oxide etching mask.

Lee JH, Jang Y, Heo K, Lee JM, Choi SH, Joo WJ, Hwang SW, Whang D. Lee JH, et al. Among authors: whang d. J Nanosci Nanotechnol. 2013 Nov;13(11):7401-5. doi: 10.1166/jnn.2013.7876. J Nanosci Nanotechnol. 2013. PMID: 24245263

8

Reliability enhancement of germanium nanowires using graphene as a protective layer: aspect of thermal stability.

Lee JH, Choi SH, Patole SP, Jang Y, Heo K, Joo WJ, Yoo JB, Hwang SW, Whang D. Lee JH, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5069-74. doi: 10.1021/am5001294. Epub 2014 Mar 21. ACS Appl Mater Interfaces. 2014. PMID: 24617670

9

Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium.

Lee JH, Lee EK, Joo WJ, Jang Y, Kim BS, Lim JY, Choi SH, Ahn SJ, Ahn JR, Park MH, Yang CW, Choi BL, Hwang SW, Whang D. Lee JH, et al. Among authors: whang d. Science. 2014 Apr 18;344(6181):286-9. doi: 10.1126/science.1252268. Epub 2014 Apr 3. Science. 2014. PMID: 24700471

10

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Van NH, Lee JH, Sohn JI, Cha SN, Whang D, Kim JM, Kang DJ. Van NH, et al. Among authors: whang d. Nanoscale. 2014 May 21;6(10):5479-83. doi: 10.1039/c3nr06690h. Nanoscale. 2014. PMID: 24727896

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