Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Liu J, Du A, Yang H, Yin X, Huang W, Li C, Li Y, Wang Q, Lu S, Kong Z, Xiang J, Du Y, Luo J, Li J, Radamson HH, Wang W, Ye T.
Xie L, et al. Among authors: wang g, wang w, wang q.
ACS Nano. 2023 Nov 28;17(22):22259-22267. doi: 10.1021/acsnano.3c02518. Epub 2023 Oct 12.
ACS Nano. 2023.
PMID: 37823534