Wang T - Search Results

1

Standards for the Characterization of Endurance in Resistive Switching Devices.

Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: wang t. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.

2

Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices.

Shang D, Li P, Wang T, Carria E, Sun J, Shen B, Taubner T, Valov I, Waser R, Wuttig M. Shang D, et al. Among authors: wang t. Nanoscale. 2015 Apr 14;7(14):6023-30. doi: 10.1039/c4nr07545e. Nanoscale. 2015. PMID: 25766380

3

Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States.

Zhu K, Liang X, Yuan B, Villena MA, Wen C, Wang T, Chen S, Hui F, Shi Y, Lanza M. Zhu K, et al. Among authors: wang t. ACS Appl Mater Interfaces. 2019 Oct 16;11(41):37999-38005. doi: 10.1021/acsami.9b04412. Epub 2019 Oct 1. ACS Appl Mater Interfaces. 2019. PMID: 31529969

4

Electroforming in Metal-Oxide Memristive Synapses.

Wang T, Shi Y, Puglisi FM, Chen S, Zhu K, Zuo Y, Li X, Jing X, Han T, Guo B, Bukvišová K, Kachtík L, Kolíbal M, Wen C, Lanza M. Wang T, et al. ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11806-11814. doi: 10.1021/acsami.9b19362. Epub 2020 Feb 25. ACS Appl Mater Interfaces. 2020. PMID: 32036650

5

Improving HfO₂-Based Resistive Switching Devices by Inserting a TaO_x Thin Film via Engineered In Situ Oxidation.

Wang T, Brivio S, Cianci E, Wiemer C, Perego M, Spiga S, Lanza M. Wang T, et al. ACS Appl Mater Interfaces. 2022 Jun 1;14(21):24565-24574. doi: 10.1021/acsami.2c03364. Epub 2022 May 18. ACS Appl Mater Interfaces. 2022. PMID: 35585656

6

Elevating Surface-Enhanced Infrared Absorption with Quantum Mechanical Effects of Plasmonic Nanocavities.

Huang G, Liu K, Shi G, Guo Q, Li X, Liu Z, Ma W, Wang T. Huang G, et al. Among authors: wang t. Nano Lett. 2022 Aug 10;22(15):6083-6090. doi: 10.1021/acs.nanolett.2c01042. Epub 2022 Jul 22. Nano Lett. 2022. PMID: 35866846

7

In Situ Active Switching of Bipolar Current Rectification in 2D Semiconductor Vertical Diodes.

Guo Q, Zou Z, Xie Y, Lan X, Zhu G, Xu K, Jin R, Xu W, Huang G, Li Y, Wang T, Du W. Guo Q, et al. Among authors: wang t. ACS Appl Mater Interfaces. 2023 Jan 11;15(1):1583-1591. doi: 10.1021/acsami.2c18370. Epub 2022 Dec 20. ACS Appl Mater Interfaces. 2023. PMID: 36537368

8

Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity.

Xu K, Zou Z, Li W, Zhang L, Ge M, Wang T, Du W. Xu K, et al. Among authors: wang t. Nano Lett. 2024 Mar 27;24(12):3647-3653. doi: 10.1021/acs.nanolett.3c04899. Epub 2024 Mar 15. Nano Lett. 2024. PMID: 38488282

9

Optical properties of single infrared resonant circular microcavities for surface phonon polaritons.

Wang T, Li P, Hauer B, Chigrin DN, Taubner T. Wang T, et al. Nano Lett. 2013 Nov 13;13(11):5051-5. doi: 10.1021/nl4020342. Epub 2013 Oct 16. Nano Lett. 2013. PMID: 24117024

10

Graphene-enhanced infrared near-field microscopy.

Li P, Wang T, Böckmann H, Taubner T. Li P, et al. Among authors: wang t. Nano Lett. 2014 Aug 13;14(8):4400-5. doi: 10.1021/nl501376a. Epub 2014 Jul 17. Nano Lett. 2014. PMID: 25019504

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