Wang KL - Search Results

1

Room-Temperature Skyrmion Shift Device for Memory Application.

Yu G, Upadhyaya P, Shao Q, Wu H, Yin G, Li X, He C, Jiang W, Han X, Amiri PK, Wang KL. Yu G, et al. Among authors: wang kl. Nano Lett. 2017 Jan 11;17(1):261-268. doi: 10.1021/acs.nanolett.6b04010. Epub 2016 Dec 19. Nano Lett. 2017. PMID: 27966987

2

Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons.

Xu G, Torres CM, Song EB, Tang J, Bai J, Duan X, Zhang Y, Wang KL. Xu G, et al. Among authors: wang kl. Nano Lett. 2010 Nov 10;10(11):4590-4. doi: 10.1021/nl1025979. Epub 2010 Oct 12. Nano Lett. 2010. PMID: 20939609

3

Edge effect on resistance scaling rules in graphene nanostructures.

Xu G, Torres CM, Tang J, Bai J, Song EB, Huang Y, Duan X, Zhang Y, Wang KL. Xu G, et al. Among authors: wang kl. Nano Lett. 2011 Mar 9;11(3):1082-6. doi: 10.1021/nl103966t. Epub 2011 Feb 15. Nano Lett. 2011. PMID: 21322591

4

Revelation of topological surface states in Bi2Se3 thin films by in situ Al passivation.

Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov AV, Wang KL. Lang M, et al. Among authors: wang y, wang kl. ACS Nano. 2012 Jan 24;6(1):295-302. doi: 10.1021/nn204239d. Epub 2011 Dec 13. ACS Nano. 2012. PMID: 22147687

5

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.

He L, Xiu F, Yu X, Teague M, Jiang W, Fan Y, Kou X, Lang M, Wang Y, Huang G, Yeh NC, Wang KL. He L, et al. Among authors: wang y, wang kl. Nano Lett. 2012 Mar 14;12(3):1486-90. doi: 10.1021/nl204234j. Epub 2012 Feb 27. Nano Lett. 2012. PMID: 22316380

6

High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy.

Zeng Z, Amiri PK, Krivorotov IN, Zhao H, Finocchio G, Wang JP, Katine JA, Huai Y, Langer J, Galatsis K, Wang KL, Jiang H. Zeng Z, et al. Among authors: wang kl, wang jp. ACS Nano. 2012 Jul 24;6(7):6115-21. doi: 10.1021/nn301222v. Epub 2012 Jun 11. ACS Nano. 2012. PMID: 22663148

7

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

Zhu J, Katine JA, Rowlands GE, Chen YJ, Duan Z, Alzate JG, Upadhyaya P, Langer J, Amiri PK, Wang KL, Krivorotov IN. Zhu J, et al. Among authors: wang kl. Phys Rev Lett. 2012 May 11;108(19):197203. doi: 10.1103/PhysRevLett.108.197203. Epub 2012 May 9. Phys Rev Lett. 2012. PMID: 23003081

8

Electrical probing of magnetic phase transition and domain wall motion in single-crystalline Mn₅Ge₃ nanowire.

Tang J, Wang CY, Jiang W, Chang LT, Fan Y, Chan M, Wu C, Hung MH, Liu PH, Yang HJ, Tuan HY, Chen LJ, Wang KL. Tang J, et al. Among authors: wang kl, wang cy. Nano Lett. 2012 Dec 12;12(12):6372-9. doi: 10.1021/nl303645k. Epub 2012 Dec 3. Nano Lett. 2012. PMID: 23167773

9

Competing weak localization and weak antilocalization in ultrathin topological insulators.

Lang M, He L, Kou X, Upadhyaya P, Fan Y, Chu H, Jiang Y, Bardarson JH, Jiang W, Choi ES, Wang Y, Yeh NC, Moore J, Wang KL. Lang M, et al. Among authors: wang y, wang kl. Nano Lett. 2013 Jan 9;13(1):48-53. doi: 10.1021/nl303424n. Epub 2012 Dec 7. Nano Lett. 2013. PMID: 23198980

10

Separation of top and bottom surface conduction in Bi2Te3 thin films.

Yu X, He L, Lang M, Jiang W, Xiu F, Liao Z, Wang Y, Kou X, Zhang P, Tang J, Huang G, Zou J, Wang KL. Yu X, et al. Among authors: wang y, wang kl. Nanotechnology. 2013 Jan 11;24(1):015705. doi: 10.1088/0957-4484/24/1/015705. Epub 2012 Dec 7. Nanotechnology. 2013. PMID: 23221282

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