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Measuring Band Modulation of MoS2 with Ferroelectric Gates.
Sun X, Chen Y, Zhao D, Taniguchi T, Watanabe K, Wang J, Xue J. Sun X, et al. Among authors: wang j. Nano Lett. 2023 Mar 22;23(6):2114-2120. doi: 10.1021/acs.nanolett.2c04326. Epub 2023 Mar 3. Nano Lett. 2023. PMID: 36867589
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.
Chen Y, Wang X, Wang P, Huang H, Wu G, Tian B, Hong Z, Wang Y, Sun S, Shen H, Wang J, Hu W, Sun J, Meng X, Chu J. Chen Y, et al. Among authors: wang x, wang j, wang y, wang p. ACS Appl Mater Interfaces. 2016 Nov 30;8(47):32083-32088. doi: 10.1021/acsami.6b10206. Epub 2016 Nov 15. ACS Appl Mater Interfaces. 2016. PMID: 27801569
A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor.
Yin C , Wang X , Chen Y , Li D , Lin T , Sun S , Shen H , Du P , Sun J , Meng X , Chu J , Wong HF , Leung CW , Wang Z , Wang J . Yin C , et al. Among authors: wang x, wang z, wang j. Nanoscale. 2018 Jan 25;10(4):1727-1734. doi: 10.1039/c7nr08034d. Nanoscale. 2018. PMID: 29308498
Graphene Dirac point tuned by ferroelectric polarization field.
Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J. Wang X, et al. Among authors: wang j. Nanotechnology. 2018 Apr 3;29(13):134002. doi: 10.1088/1361-6528/aaa852. Nanotechnology. 2018. PMID: 29339566
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