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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.
Nanotechnology. 2017 Jan 6;28(1):015701. doi: 10.1088/0957-4484/28/1/015701. Epub 2016 Nov 29.
Nanotechnology. 2017.
PMID: 27897139
Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.
Barettin D, Auf der Maur M, di Carlo A, Pecchia A, Tsatsulnikov AF, Lundin WV, Sakharov AV, Nikolaev AE, Korytov M, Cherkashin N, Hÿtch MJ, Karpov SY.
Barettin D, et al. Among authors: tsatsulnikov af.
Nanotechnology. 2017 Jul 7;28(27):275201. doi: 10.1088/1361-6528/aa75a8.
Nanotechnology. 2017.
PMID: 28612754
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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.
Sakharov AV, Arteev DS, Zavarin EE, Nikolaev AE, Lundin WV, Prasolov ND, Yagovkina MA, Tsatsulnikov AF, Fedotov SD, Sokolov EM, Statsenko VN.
Sakharov AV, et al. Among authors: tsatsulnikov af.
Materials (Basel). 2023 Jun 8;16(12):4265. doi: 10.3390/ma16124265.
Materials (Basel). 2023.
PMID: 37374449
Free PMC article.
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Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs.
Barettin D, Sakharov AV, Tsatsulnikov AF, Nikolaev AE, Pecchia A, Auf der Maur M, Karpov SY, Cherkashin N.
Barettin D, et al. Among authors: tsatsulnikov af.
Nanomaterials (Basel). 2023 Apr 14;13(8):1367. doi: 10.3390/nano13081367.
Nanomaterials (Basel). 2023.
PMID: 37110952
Free PMC article.
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Electromechanically Coupled III-N Quantum Dots.
Barettin D, Sakharov AV, Tsatsulnikov AF, Nikolaev AE, Cherkashin N.
Barettin D, et al. Among authors: tsatsulnikov af.
Nanomaterials (Basel). 2023 Jan 5;13(2):241. doi: 10.3390/nano13020241.
Nanomaterials (Basel). 2023.
PMID: 36677994
Free PMC article.
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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer.
Arteev DS, Sakharov AV, Lundin WV, Zavarin EE, Nikolaev AE, Tsatsulnikov AF, Ustinov VM.
Arteev DS, et al. Among authors: tsatsulnikov af.
Materials (Basel). 2022 Dec 14;15(24):8945. doi: 10.3390/ma15248945.
Materials (Basel). 2022.
PMID: 36556750
Free PMC article.
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