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2019 | 1 |
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Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.
Materials (Basel). 2019 Jan 2;12(1):124. doi: 10.3390/ma12010124.
Materials (Basel). 2019.
PMID: 30609720
Free PMC article.
Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator.
Sadi T, Mehonic A, Montesi L, Buckwell M, Kenyon A, Asenov A.
Sadi T, et al.
J Phys Condens Matter. 2018 Feb 28;30(8):084005. doi: 10.1088/1361-648X/aaa7c1.
J Phys Condens Matter. 2018.
PMID: 29334362
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