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Oxygen relocation during HfO2 ALD on InAs.
D'Acunto G, Kokkonen E, Shayesteh P, Boix V, Rehman F, Mosahebfard Z, Lind E, Schnadt J, Timm R. D'Acunto G, et al. Among authors: timm r. Faraday Discuss. 2022 Aug 25;236(0):71-85. doi: 10.1039/d1fd00116g. Faraday Discuss. 2022. PMID: 35506440
Tuneable 2D surface Bismuth incorporation on InAs nanosheets.
Benter S, Liu Y, Da Paixao Maciel R, Ong CS, Linnala L, Pan D, Irish A, Liu YP, Zhao J, Xu H, Eriksson O, Timm R, Mikkelsen A. Benter S, et al. Among authors: timm r. Nanoscale. 2023 Jun 1;15(21):9551-9559. doi: 10.1039/d3nr00454f. Nanoscale. 2023. PMID: 37190857 Free PMC article.
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2.
Athle R, Persson AEO, Irish A, Menon H, Timm R, Borg M. Athle R, et al. Among authors: timm r. ACS Appl Mater Interfaces. 2021 Mar 10;13(9):11089-11095. doi: 10.1021/acsami.1c01734. Epub 2021 Feb 24. ACS Appl Mater Interfaces. 2021. PMID: 33625827 Free PMC article.
81 results