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Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement.
Nano Lett. 2021 Apr 28;21(8):3372-3378. doi: 10.1021/acs.nanolett.0c04491. Epub 2021 Apr 7.
Nano Lett. 2021.
PMID: 33825480
Direct imaging of p-n junction in core-shell GaN wires.
Tchoulfian P, Donatini F, Levy F, Dussaigne A, Ferret P, Pernot J.
Tchoulfian P, et al.
Nano Lett. 2014 Jun 11;14(6):3491-8. doi: 10.1021/nl5010493. Epub 2014 May 29.
Nano Lett. 2014.
PMID: 24837761
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Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires.
Donatini F, de Luna Bugallo A, Tchoulfian P, Chicot G, Sartel C, Sallet V, Pernot J.
Donatini F, et al. Among authors: tchoulfian p.
Nano Lett. 2016 May 11;16(5):2938-44. doi: 10.1021/acs.nanolett.5b04710. Epub 2016 Apr 29.
Nano Lett. 2016.
PMID: 27105083
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Spectroscopic XPEEM of highly conductive SI-doped GaN wires.
Renault O, Morin J, Tchoulfian P, Chevalier N, Feyer V, Pernot J, Schneider CM.
Renault O, et al. Among authors: tchoulfian p.
Ultramicroscopy. 2015 Dec;159 Pt 3:476-81. doi: 10.1016/j.ultramic.2015.05.007. Epub 2015 May 14.
Ultramicroscopy. 2015.
PMID: 26004038
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