Tchernycheva M - Search Results

1

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Saket O, Himwas C, Piazza V, Bayle F, Cattoni A, Oehler F, Patriarche G, Travers L, Collin S, Julien FH, Harmand JC, Tchernycheva M. Saket O, et al. Among authors: tchernycheva m. Nanotechnology. 2020 Apr 3;31(14):145708. doi: 10.1088/1361-6528/ab62c9. Epub 2019 Dec 17. Nanotechnology. 2020. PMID: 31846937

2

Growth and characterization of InP nanowires with InAsP insertions.

Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC. Tchernycheva M, et al. Nano Lett. 2007 Jun;7(6):1500-4. doi: 10.1021/nl070228l. Epub 2007 May 5. Nano Lett. 2007. PMID: 17480113

3

Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE. Patriarche G, et al. Among authors: tchernycheva m. Nano Lett. 2008 Jun;8(6):1638-43. doi: 10.1021/nl080319y. Epub 2008 May 10. Nano Lett. 2008. PMID: 18471022

4

Shape modification of III-V nanowires: the role of nucleation on sidewalls.

Dubrovskii VG, Sibirev NV, Cirlin GE, Tchernycheva M, Harmand JC, Ustinov VM. Dubrovskii VG, et al. Among authors: tchernycheva m. Phys Rev E Stat Nonlin Soft Matter Phys. 2008 Mar;77(3 Pt 1):031606. doi: 10.1103/PhysRevE.77.031606. Epub 2008 Mar 14. Phys Rev E Stat Nonlin Soft Matter Phys. 2008. PMID: 18517394

5

Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire.

Rigutti L, Tchernycheva M, De Luna Bugallo A, Jacopin G, Julien FH, Zagonel LF, March K, Stephan O, Kociak M, Songmuang R. Rigutti L, et al. Among authors: tchernycheva m. Nano Lett. 2010 Aug 11;10(8):2939-43. doi: 10.1021/nl1010977. Nano Lett. 2010. PMID: 20617803

6

Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles.

Bugallo Ade L, Tchernycheva M, Jacopin G, Rigutti L, Julien FH, Chou ST, Lin YT, Tseng PH, Tu LW. Bugallo Ade L, et al. Among authors: tchernycheva m. Nanotechnology. 2010 Aug 6;21(31):315201. doi: 10.1088/0957-4484/21/31/315201. Epub 2010 Jul 15. Nanotechnology. 2010. PMID: 20634569

7

Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs.

Rigutti L, Jacopin G, Bugallo Ade L, Tchernycheva M, Warde E, Julien FH, Songmuang R, Galopin E, Largeau L, Harmand JC. Rigutti L, et al. Among authors: tchernycheva m. Nanotechnology. 2010 Oct 22;21(42):425206. doi: 10.1088/0957-4484/21/42/425206. Epub 2010 Sep 24. Nanotechnology. 2010. PMID: 20864782

8

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment.

Zhang X, Dubrovskii VG, Sibirev NV, Cirlin GE, Sartel C, Tchernycheva M, Harmand JC, Glas F. Zhang X, et al. Among authors: tchernycheva m. Nanoscale Res Lett. 2010 Jul 24;5(10):1692-7. doi: 10.1007/s11671-010-9698-7. Nanoscale Res Lett. 2010. PMID: 21076695 Free PMC article.

9

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure.

Zagonel LF, Mazzucco S, Tencé M, March K, Bernard R, Laslier B, Jacopin G, Tchernycheva M, Rigutti L, Julien FH, Songmuang R, Kociak M. Zagonel LF, et al. Among authors: tchernycheva m. Nano Lett. 2011 Feb 9;11(2):568-73. doi: 10.1021/nl103549t. Epub 2010 Dec 23. Nano Lett. 2011. PMID: 21182283 Free article.

10

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE. Tchernycheva M, et al. Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14. Nanotechnology. 2006. PMID: 21727532

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