Tchernycheva M - Search Results

1

Growth and characterization of InP nanowires with InAsP insertions.

Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC. Tchernycheva M, et al. Nano Lett. 2007 Jun;7(6):1500-4. doi: 10.1021/nl070228l. Epub 2007 May 5. Nano Lett. 2007. PMID: 17480113

2

Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE. Patriarche G, et al. Among authors: tchernycheva m. Nano Lett. 2008 Jun;8(6):1638-43. doi: 10.1021/nl080319y. Epub 2008 May 10. Nano Lett. 2008. PMID: 18471022

3

Epitaxy of GaN Nanowires on Graphene.

Kumaresan V, Largeau L, Madouri A, Glas F, Zhang H, Oehler F, Cavanna A, Babichev A, Travers L, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: tchernycheva m. Nano Lett. 2016 Aug 10;16(8):4895-902. doi: 10.1021/acs.nanolett.6b01453. Epub 2016 Jul 26. Nano Lett. 2016. PMID: 27414518

4

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE. Tchernycheva M, et al. Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14. Nanotechnology. 2006. PMID: 21727532

5

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).

Largeau L, Dheeraj DL, Tchernycheva M, Cirlin GE, Harmand JC. Largeau L, et al. Among authors: tchernycheva m. Nanotechnology. 2008 Apr 16;19(15):155704. doi: 10.1088/0957-4484/19/15/155704. Epub 2008 Mar 12. Nanotechnology. 2008. PMID: 21825628

6

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.

Chen HL, Himwas C, Scaccabarozzi A, Rale P, Oehler F, Lemaître A, Lombez L, Guillemoles JF, Tchernycheva M, Harmand JC, Cattoni A, Collin S. Chen HL, et al. Among authors: tchernycheva m. Nano Lett. 2017 Nov 8;17(11):6667-6675. doi: 10.1021/acs.nanolett.7b02620. Epub 2017 Oct 23. Nano Lett. 2017. PMID: 29035545

7

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment.

Zhang X, Dubrovskii VG, Sibirev NV, Cirlin GE, Sartel C, Tchernycheva M, Harmand JC, Glas F. Zhang X, et al. Among authors: tchernycheva m. Nanoscale Res Lett. 2010 Jul 24;5(10):1692-7. doi: 10.1007/s11671-010-9698-7. Nanoscale Res Lett. 2010. PMID: 21076695 Free PMC article.

8

Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate.

Tchernycheva M, Rigutti L, Jacopin G, de Luna Bugallo A, Lavenus P, Julien FH, Timofeeva M, Bouravleuv AD, Cirlin GE, Dhaka V, Lipsanen H, Largeau L. Tchernycheva M, et al. Nanotechnology. 2012 Jul 5;23(26):265402. doi: 10.1088/0957-4484/23/26/265402. Epub 2012 Jun 15. Nanotechnology. 2012. PMID: 22699243

9

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Saket O, Himwas C, Piazza V, Bayle F, Cattoni A, Oehler F, Patriarche G, Travers L, Collin S, Julien FH, Harmand JC, Tchernycheva M. Saket O, et al. Among authors: tchernycheva m. Nanotechnology. 2020 Apr 3;31(14):145708. doi: 10.1088/1361-6528/ab62c9. Epub 2019 Dec 17. Nanotechnology. 2020. PMID: 31846937

10

Shape modification of III-V nanowires: the role of nucleation on sidewalls.

Dubrovskii VG, Sibirev NV, Cirlin GE, Tchernycheva M, Harmand JC, Ustinov VM. Dubrovskii VG, et al. Among authors: tchernycheva m. Phys Rev E Stat Nonlin Soft Matter Phys. 2008 Mar;77(3 Pt 1):031606. doi: 10.1103/PhysRevE.77.031606. Epub 2008 Mar 14. Phys Rev E Stat Nonlin Soft Matter Phys. 2008. PMID: 18517394

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