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Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.
Puybaret R, Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A. Puybaret R, et al. Among authors: sundaram s. Nanotechnology. 2017 May 12;28(19):195304. doi: 10.1088/1361-6528/aa6a43. Epub 2017 Mar 30. Nanotechnology. 2017. PMID: 28358724
Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
Vuong P, Sundaram S, Mballo A, Patriarche G, Leone S, Benkhelifa F, Karrakchou S, Moudakir T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Vuong P, et al. Among authors: sundaram s. ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55460-55466. doi: 10.1021/acsami.0c16850. Epub 2020 Nov 25. ACS Appl Mater Interfaces. 2020. PMID: 33237738
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A. Karrakchou S, et al. Among authors: sundaram s. Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z. Sci Rep. 2020. PMID: 33303773 Free PMC article.
1,144 results