Stewart MD Jr - Search Results

1

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits.

Hong Y, Ramanayaka AN, Stein R, Stewart MD Jr, Pomeroy JM. Hong Y, et al. Among authors: stewart md jr. J Vac Sci Technol B Nanotechnol Microelectron. 2021;39(1):10.1116/6.0000549. doi: 10.1116/6.0000549. J Vac Sci Technol B Nanotechnol Microelectron. 2021. PMID: 34249479 Free PMC article.

2

The effect of strain on tunnel barrier height in silicon quantum devices.

Stein RM, Stewart MD Jr. Stein RM, et al. Among authors: stewart md jr. J Appl Phys. 2020;128(2):10.1063/5.0010253. doi: 10.1063/5.0010253. J Appl Phys. 2020. PMID: 33574626 Free PMC article.

3

Alternatives to aluminum gates for silicon quantum devices: defects and strain.

Stein RM, Barcikowski ZS, Pookpanratana SJ, Pomeroy JM, Stewart MD Jr. Stein RM, et al. Among authors: stewart md jr. J Appl Phys. 2021;130(11):10.1063/5.0036520. doi: 10.1063/5.0036520. J Appl Phys. 2021. PMID: 36733463 Free PMC article.

4

Reduction of charge offset drift using plasma oxidized aluminum in SETs.

Hong Y, Stein R, Stewart MD Jr, Zimmerman NM, Pomeroy JM. Hong Y, et al. Among authors: stewart md jr. Sci Rep. 2020 Oct 26;10(1):18216. doi: 10.1038/s41598-020-75282-4. Sci Rep. 2020. PMID: 33106545 Free PMC article.

5

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Schmucker SW, Namboodiri PN, Kashid R, Wang X, Hu B, Wyrick JE, Myers AF, Schumacher JD, Silver RM, Stewart MD Jr. Schmucker SW, et al. Among authors: stewart md jr. Phys Rev Appl. 2019;11:10.1103/PhysRevApplied.11.034071. doi: 10.1103/PhysRevApplied.11.034071. Phys Rev Appl. 2019. PMID: 31579257 Free PMC article.

6

STM patterned nanowire measurements using photolithographically defined implants in Si(100).

Ramanayaka AN, Kim HS, Tang K, Wang X, Silver RM, Stewart MD Jr, Pomeroy JM. Ramanayaka AN, et al. Among authors: stewart md jr. Sci Rep. 2018 Jan 29;8(1):1790. doi: 10.1038/s41598-018-20042-8. Sci Rep. 2018. PMID: 29379057 Free PMC article.

7

Effect of device design on charge offset drift in Si/SiO₂ single electron devices.

Hu B, Ochoa ED, Sanchez D, Perron JK, Zimmerman NM, Stewart MD Jr. Hu B, et al. Among authors: stewart md jr. J Appl Phys. 2018;124:10.1063/1.5048013. doi: 10.1063/1.5048013. J Appl Phys. 2018. PMID: 31274883 Free PMC article.

8

A new regime of Pauli-spin blockade.

Perron JK, Stewart MD Jr, Zimmerman NM. Perron JK, et al. Among authors: stewart md jr. J Appl Phys. 2016 Apr;119(13):134307. doi: 10.1063/1.4945393. Epub 2016 Apr 7. J Appl Phys. 2016. PMID: 29353918 Free PMC article.

9

A quantitative study of bias triangles presented in chemical potential space.

Perron JK, Stewart MD Jr, Zimmerman NM. Perron JK, et al. Among authors: stewart md jr. J Phys Condens Matter. 2015 Jun 17;27(23):235302. doi: 10.1088/0953-8984/27/23/235302. Epub 2015 May 20. J Phys Condens Matter. 2015. PMID: 25992789

10

Field evolution of coexisting superconducting and magnetic orders in CeCoIn5.

Koutroulakis G, Stewart MD Jr, Mitrović VF, Horvatić M, Berthier C, Lapertot G, Flouquet J. Koutroulakis G, et al. Among authors: stewart md jr. Phys Rev Lett. 2010 Feb 26;104(8):087001. doi: 10.1103/PhysRevLett.104.087001. Epub 2010 Feb 23. Phys Rev Lett. 2010. PMID: 20366958

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

13 results

Search Page