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Direct identification of the conducting channels in a functioning memristive device.
Adv Mater. 2010 Aug 24;22(32):3573-7. doi: 10.1002/adma.201000186.
Adv Mater. 2010.
PMID: 20512814
No abstract available.
Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS.
Strachan JP, Joshua Yang J, Münstermann R, Scholl A, Medeiros-Ribeiro G, Stewart DR, Stanley Williams R.
Strachan JP, et al. Among authors: stanley williams r.
Nanotechnology. 2009 Dec 2;20(48):485701. doi: 10.1088/0957-4484/20/48/485701. Epub 2009 Oct 30.
Nanotechnology. 2009.
PMID: 19880979
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Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.
Kumar S, Davila N, Wang Z, Huang X, Strachan JP, Vine D, David Kilcoyne AL, Nishi Y, Stanley Williams R.
Kumar S, et al. Among authors: stanley williams r.
Nanoscale. 2017 Feb 2;9(5):1793-1798. doi: 10.1039/c6nr07671h.
Nanoscale. 2017.
PMID: 27906408
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Observation of two resistance switching modes in TiO2 memristive devices electroformed at low current.
Miao F, Joshua Yang J, Borghetti J, Medeiros-Ribeiro G, Stanley Williams R.
Miao F, et al. Among authors: stanley williams r.
Nanotechnology. 2011 Jun 24;22(25):254007. doi: 10.1088/0957-4484/22/25/254007. Epub 2011 May 16.
Nanotechnology. 2011.
PMID: 21572203
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Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.
Kuekes PJ, Robinett W, Roth RM, Seroussi G, Snider GS, Stanley Williams R.
Kuekes PJ, et al. Among authors: stanley williams r.
Nanotechnology. 2006 Feb 28;17(4):1052-61. doi: 10.1088/0957-4484/17/4/035. Epub 2006 Jan 30.
Nanotechnology. 2006.
PMID: 21727381
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Writing to and reading from a nano-scale crossbar memory based on memristors.
Vontobel PO, Robinett W, Kuekes PJ, Stewart DR, Straznicky J, Stanley Williams R.
Vontobel PO, et al. Among authors: stanley williams r.
Nanotechnology. 2009 Oct 21;20(42):425204. doi: 10.1088/0957-4484/20/42/425204. Epub 2009 Sep 25.
Nanotechnology. 2009.
PMID: 19779237
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