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Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE.
Nanotechnology. 2021 May 28;32(33). doi: 10.1088/1361-6528/ac0027.
Nanotechnology. 2021.
PMID: 33975293
New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles.
Bouravleuv A, Ilkiv I, Reznik R, Kotlyar K, Soshnikov I, Cirlin G, Brunkov P, Kirilenko D, Bondarenko L, Nepomnyaschiy A, Gruznev D, Zotov A, Saranin A, Dhaka V, Lipsanen H.
Bouravleuv A, et al.
Nanotechnology. 2018 Jan 26;29(4):045602. doi: 10.1088/1361-6528/aa9ab1.
Nanotechnology. 2018.
PMID: 29135463
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Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.
Timofeeva M, Bouravleuv A, Cirlin G, Shtrom I, Soshnikov I, Reig Escalé M, Sergeyev A, Grange R.
Timofeeva M, et al.
Nano Lett. 2016 Oct 12;16(10):6290-6297. doi: 10.1021/acs.nanolett.6b02592. Epub 2016 Sep 28.
Nano Lett. 2016.
PMID: 27657488
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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
Cirlin G, Bouravleuv A, Soshnikov I, Samsonenko YB, Dubrovskii V, Arakcheeva E, Tanklevskaya E, Werner P.
Cirlin G, et al. Among authors: soshnikov i.
Nanoscale Res Lett. 2009 Nov 14;5(2):360-3. doi: 10.1007/s11671-009-9488-2.
Nanoscale Res Lett. 2009.
PMID: 20672038
Free PMC article.
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