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Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces.
Nanotechnology. 2020 Nov 27;31(48):485604. doi: 10.1088/1361-6528/abb15e.
Nanotechnology. 2020.
PMID: 32931474
Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy.
Balakirev SV, Solodovnik MS, Eremenko MM, Konoplev BG, Ageev OA.
Balakirev SV, et al. Among authors: solodovnik ms.
Nanotechnology. 2019 Dec 13;30(50):505601. doi: 10.1088/1361-6528/ab40d6. Epub 2019 Sep 3.
Nanotechnology. 2019.
PMID: 31480037
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Resistive Switching of GaAs Oxide Nanostructures.
Avilov V, Polupanov N, Tominov R, Solodovnik M, Konoplev B, Smirnov V, Ageev O.
Avilov V, et al.
Materials (Basel). 2020 Aug 5;13(16):3451. doi: 10.3390/ma13163451.
Materials (Basel). 2020.
PMID: 32764373
Free PMC article.
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Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes.
Balakirev SV, Chernenko NE, Eremenko MM, Ageev OA, Solodovnik MS.
Balakirev SV, et al. Among authors: solodovnik ms.
Nanomaterials (Basel). 2021 Apr 30;11(5):1184. doi: 10.3390/nano11051184.
Nanomaterials (Basel). 2021.
PMID: 33946198
Free PMC article.
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Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth.
Shandyba N, Balakirev S, Sharov V, Chernenko N, Kirichenko D, Solodovnik M.
Shandyba N, et al.
Int J Mol Sci. 2022 Dec 23;24(1):224. doi: 10.3390/ijms24010224.
Int J Mol Sci. 2022.
PMID: 36613671
Free PMC article.
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Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam.
Shandyba N, Kirichenko D, Sharov V, Chernenko N, Balakirev S, Solodovnik M.
Shandyba N, et al.
Nanotechnology. 2023 Aug 29;34(46). doi: 10.1088/1361-6528/acee84.
Nanotechnology. 2023.
PMID: 37557087
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