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Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.
Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, Fölsch S, Feenstra RM, Wallace RM, Cho K, Fullerton-Shirey SK, Redwing JM, Robinson JA. Lin YC, et al. Among authors: smyth cm. ACS Nano. 2018 Feb 27;12(2):965-975. doi: 10.1021/acsnano.7b07059. Epub 2018 Jan 23. ACS Nano. 2018. PMID: 29360349
MoS2-Titanium Contact Interface Reactions.
McDonnell S, Smyth C, Hinkle CL, Wallace RM. McDonnell S, et al. ACS Appl Mater Interfaces. 2016 Mar;8(12):8289-94. doi: 10.1021/acsami.6b00275. Epub 2016 Mar 21. ACS Appl Mater Interfaces. 2016. PMID: 26967016
Contact Engineering High-Performance n-Type MoTe2 Transistors.
Mleczko MJ, Yu AC, Smyth CM, Chen V, Shin YC, Chatterjee S, Tsai YC, Nishi Y, Wallace RM, Pop E. Mleczko MJ, et al. Among authors: smyth cm. Nano Lett. 2019 Sep 11;19(9):6352-6362. doi: 10.1021/acs.nanolett.9b02497. Epub 2019 Aug 13. Nano Lett. 2019. PMID: 31314531
57 results