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Antiferroelectric negative capacitance from a structural phase transition in zirconia.
Hoffmann M, Wang Z, Tasneem N, Zubair A, Ravindran PV, Tian M, Gaskell AA, Triyoso D, Consiglio S, Tapily K, Clark R, Hur J, Pentapati SSK, Lim SK, Dopita M, Yu S, Chern W, Kacher J, Reyes-Lillo SE, Antoniadis D, Ravichandran J, Slesazeck S, Mikolajick T, Khan AI. Hoffmann M, et al. Among authors: slesazeck s. Nat Commun. 2022 Mar 9;13(1):1228. doi: 10.1038/s41467-022-28860-1. Nat Commun. 2022. PMID: 35264570 Free PMC article.
Reconfigurable silicon nanowire transistors.
Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM. Heinzig A, et al. Among authors: slesazeck s. Nano Lett. 2012 Jan 11;12(1):119-24. doi: 10.1021/nl203094h. Epub 2011 Dec 1. Nano Lett. 2012. PMID: 22111808
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.
Mulaosmanovic H, Ocker J, Müller S, Schroeder U, Müller J, Polakowski P, Flachowsky S, van Bentum R, Mikolajick T, Slesazeck S. Mulaosmanovic H, et al. Among authors: slesazeck s. ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3792-3798. doi: 10.1021/acsami.6b13866. Epub 2017 Jan 24. ACS Appl Mater Interfaces. 2017. PMID: 28071052
Unveiling the double-well energy landscape in a ferroelectric layer.
Hoffmann M, Fengler FPG, Herzig M, Mittmann T, Max B, Schroeder U, Negrea R, Lucian P, Slesazeck S, Mikolajick T. Hoffmann M, et al. Among authors: slesazeck s. Nature. 2019 Jan;565(7740):464-467. doi: 10.1038/s41586-018-0854-z. Epub 2019 Jan 14. Nature. 2019. PMID: 30643206
Memory technology-a primer for material scientists.
Schenk T, Pešić M, Slesazeck S, Schroeder U, Mikolajick T. Schenk T, et al. Among authors: slesazeck s. Rep Prog Phys. 2020 Aug;83(8):086501. doi: 10.1088/1361-6633/ab8f86. Epub 2020 May 1. Rep Prog Phys. 2020. PMID: 32357345
18 results