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Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition.
Chaleawpong R, Promros N, Charoenyuenyao P, Sittimart P, Takeichi S, Katamune Y, Zkria A, Abubakr E, Egiza M, Ali AM, Yoshitake T. Chaleawpong R, et al. Among authors: sittimart p. J Nanosci Nanotechnol. 2020 Aug 1;20(8):4884-4891. doi: 10.1166/jnn.2020.17838. J Nanosci Nanotechnol. 2020. PMID: 32126670
Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering.
Kaenrai W, Promros N, Sittimart P, Chaleawpong R, Charoenyuenyao P, Changcharoen T, Nopparuchikun A, Nogami T, Yoshitake T. Kaenrai W, et al. Among authors: sittimart p. J Nanosci Nanotechnol. 2019 Mar 1;19(3):1445-1450. doi: 10.1166/jnn.2019.16234. J Nanosci Nanotechnol. 2019. PMID: 30469203