Silly M - Search Results

1

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Pierucci D, et al. Among authors: silly m. Nanoscale. 2022 Apr 14;14(15):5859-5868. doi: 10.1039/d2nr00458e. Nanoscale. 2022. PMID: 35362486

2

Large-area and high-quality epitaxial graphene on off-axis SiC wafers.

Ouerghi A, Silly MG, Marangolo M, Mathieu C, Eddrief M, Picher M, Sirotti F, El Moussaoui S, Belkhou R. Ouerghi A, et al. Among authors: silly mg. ACS Nano. 2012 Jul 24;6(7):6075-82. doi: 10.1021/nn301152p. Epub 2012 Jun 22. ACS Nano. 2012. PMID: 22702396

3

Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.

Velez-Fort E, Mathieu C, Pallecchi E, Pigneur M, Silly MG, Belkhou R, Marangolo M, Shukla A, Sirotti F, Ouerghi A. Velez-Fort E, et al. Among authors: silly mg. ACS Nano. 2012 Dec 21;6(12):10893-900. doi: 10.1021/nn304315z. Epub 2012 Nov 20. ACS Nano. 2012. PMID: 23148722

4

Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates.

Gogneau N, Ben Gouider Trabelsi A, Silly MG, Ridene M, Portail M, Michon A, Oueslati M, Belkhou R, Sirotti F, Ouerghi A. Gogneau N, et al. Among authors: silly mg. Nanotechnol Sci Appl. 2014 Sep 27;7:85-95. doi: 10.2147/NSA.S60324. eCollection 2014. Nanotechnol Sci Appl. 2014. PMID: 25339846 Free PMC article. Review.

5

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene.

Pierucci D, Sediri H, Hajlaoui M, Girard JC, Brumme T, Calandra M, Velez-Fort E, Patriarche G, Silly MG, Ferro G, Soulière V, Marangolo M, Sirotti F, Mauri F, Ouerghi A. Pierucci D, et al. Among authors: silly mg. ACS Nano. 2015 May 26;9(5):5432-9. doi: 10.1021/acsnano.5b01239. Epub 2015 Apr 24. ACS Nano. 2015. PMID: 25893537

6

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.

Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A. Sediri H, et al. Among authors: silly mg. Sci Rep. 2015 Nov 20;5:16465. doi: 10.1038/srep16465. Sci Rep. 2015. PMID: 26585245 Free PMC article.

7

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001).

Hajlaoui M, Sediri H, Pierucci D, Henck H, Phuphachong T, Silly MG, de Vaulchier LA, Sirotti F, Guldner Y, Belkhou R, Ouerghi A. Hajlaoui M, et al. Among authors: silly mg. Sci Rep. 2016 Jan 7;6:18791. doi: 10.1038/srep18791. Sci Rep. 2016. PMID: 26739366 Free PMC article.

8

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

Pierucci D, Henck H, Avila J, Balan A, Naylor CH, Patriarche G, Dappe YJ, Silly MG, Sirotti F, Johnson AT, Asensio MC, Ouerghi A. Pierucci D, et al. Nano Lett. 2016 Jul 13;16(7):4054-61. doi: 10.1021/acs.nanolett.6b00609. Epub 2016 Jun 16. Nano Lett. 2016. PMID: 27281693

9

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer.

Pierucci D, Brumme T, Girard JC, Calandra M, Silly MG, Sirotti F, Barbier A, Mauri F, Ouerghi A. Pierucci D, et al. Among authors: silly mg. Sci Rep. 2016 Sep 15;6:33487. doi: 10.1038/srep33487. Sci Rep. 2016. PMID: 27629702 Free PMC article.

10

van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A. Ben Aziza Z, et al. Among authors: silly mg. ACS Nano. 2016 Oct 25;10(10):9679-9686. doi: 10.1021/acsnano.6b05521. Epub 2016 Oct 11. ACS Nano. 2016. PMID: 27715006

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