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Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.
Sci Rep. 2023 May 31;13(1):8793. doi: 10.1038/s41598-023-35677-5.
Sci Rep. 2023.
PMID: 37258537
Free PMC article.
Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode.
Sarjidan MAM, Shuhaimi A, Majid WHA.
Sarjidan MAM, et al. Among authors: shuhaimi a.
J Nanosci Nanotechnol. 2019 Nov 1;19(11):6995-7003. doi: 10.1166/jnn.2019.16724.
J Nanosci Nanotechnol. 2019.
PMID: 31039852
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