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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
Materials (Basel). 2017 Dec 28;11(1):43. doi: 10.3390/ma11010043.
Materials (Basel). 2017.
PMID: 29283368
Free PMC article.
Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
Chen KH, Kao MC, Huang SJ, Li JZ.
Chen KH, et al. Among authors: huang sj.
Materials (Basel). 2017 Dec 12;10(12):1415. doi: 10.3390/ma10121415.
Materials (Basel). 2017.
PMID: 29231867
Free PMC article.
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