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Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.
Nanomaterials (Basel). 2020 Dec 23;11(1):11. doi: 10.3390/nano11010011.
Nanomaterials (Basel). 2020.
PMID: 33374632
Free PMC article.
High peak optical power of 1ns pulse duration from laser diodes - low voltage thyristor vertical stack.
Slipchenko SO, Podoskin AA, Golovin VS, Romanovich DN, Shamakhov VV, Nikolaev DN, Shashkin IS, Pikhtin NA, Bagaev TA, Ladugin MA, Marmalyuk AA, Simakov VA.
Slipchenko SO, et al. Among authors: shamakhov vv.
Opt Express. 2019 Oct 28;27(22):31446-31455. doi: 10.1364/OE.27.031446.
Opt Express. 2019.
PMID: 31684379
Free article.
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Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.
Podoskin A, Golovin V, Gavrina P, Veselov D, Zolotarev V, Shamakhov V, Nikolaev D, Leshko A, Slipchenko S, Pikhtin N, Kopév P.
Podoskin A, et al. Among authors: shamakhov v.
Appl Opt. 2019 Nov 20;58(33):9089-9093. doi: 10.1364/AO.58.009089.
Appl Opt. 2019.
PMID: 31873586
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Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode.
Slipchenko S, Shashkin I, Nikolayev D, Shamakhov V, Podoskin A, Soboleva O, Bakhvalov K, Kriychkov V, Pikhtin N, Kop'ev P.
Slipchenko S, et al. Among authors: shamakhov v.
Opt Lett. 2023 Jan 15;48(2):203-206. doi: 10.1364/OL.476248.
Opt Lett. 2023.
PMID: 36638418
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Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
Shamakhov V, Slipchenko S, Nikolaev D, Smirnov A, Eliseyev I, Grishin A, Kondratov M, Shashkin I, Pikhtin N.
Shamakhov V, et al.
Nanomaterials (Basel). 2023 Aug 22;13(17):2386. doi: 10.3390/nano13172386.
Nanomaterials (Basel). 2023.
PMID: 37686894
Free PMC article.
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