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Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter.
Materials (Basel). 2021 Mar 8;14(5):1296. doi: 10.3390/ma14051296.
Materials (Basel). 2021.
PMID: 33800449
Free PMC article.
Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes.
Lee YJ, Schweitz MA, Oh JM, Koo SM.
Lee YJ, et al. Among authors: schweitz ma.
Materials (Basel). 2020 Jan 16;13(2):434. doi: 10.3390/ma13020434.
Materials (Basel). 2020.
PMID: 31963320
Free PMC article.
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Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.
Jung SW, Shin MC, Schweitz MA, Oh JM, Koo SM.
Jung SW, et al. Among authors: schweitz ma.
Materials (Basel). 2021 Feb 2;14(3):683. doi: 10.3390/ma14030683.
Materials (Basel). 2021.
PMID: 33540719
Free PMC article.
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Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.
Kim DH, Schweitz MA, Koo SM.
Kim DH, et al. Among authors: schweitz ma.
Micromachines (Basel). 2021 Mar 8;12(3):283. doi: 10.3390/mi12030283.
Micromachines (Basel). 2021.
PMID: 33800338
Free PMC article.
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Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes.
Min SJ, Schweitz MA, Nguyen NT, Koo SM.
Min SJ, et al. Among authors: schweitz ma.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):2001-2004. doi: 10.1166/jnn.2021.18934.
J Nanosci Nanotechnol. 2021.
PMID: 33404483
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