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A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F, Oliver RA. Kundys D, et al. Among authors: schulz s. Sci Technol Adv Mater. 2016 Nov 10;17(1):736-743. doi: 10.1080/14686996.2016.1244474. eCollection 2016. Sci Technol Adv Mater. 2016. PMID: 27933113 Free PMC article.
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ, Oliver RA. Humphreys CJ, et al. Among authors: schulz s. Ultramicroscopy. 2017 May;176:93-98. doi: 10.1016/j.ultramic.2017.01.019. Epub 2017 Feb 3. Ultramicroscopy. 2017. PMID: 28196629 Free article.
Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells.
Barrett RM, McMahon JM, Ahumada-Lazo R, Alanis JA, Parkinson P, Schulz S, Kappers MJ, Oliver RA, Binks D. Barrett RM, et al. Among authors: schulz s. ACS Photonics. 2023 Jul 19;10(8):2632-2640. doi: 10.1021/acsphotonics.3c00355. eCollection 2023 Aug 16. ACS Photonics. 2023. PMID: 37602288 Free PMC article.
2,163 results