Schenk T - Search Results

1

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

Schroeder U, Richter C, Park MH, Schenk T, Pešić M, Hoffmann M, Fengler FPG, Pohl D, Rellinghaus B, Zhou C, Chung CC, Jones JL, Mikolajick T. Schroeder U, et al. Among authors: schenk t. Inorg Chem. 2018 Mar 5;57(5):2752-2765. doi: 10.1021/acs.inorgchem.7b03149. Epub 2018 Feb 15. Inorg Chem. 2018. PMID: 29446630

2

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

Schenk T, Hoffmann M, Ocker J, Pešić M, Mikolajick T, Schroeder U. Schenk T, et al. ACS Appl Mater Interfaces. 2015 Sep 16;7(36):20224-33. doi: 10.1021/acsami.5b05773. Epub 2015 Sep 1. ACS Appl Mater Interfaces. 2015. PMID: 26308500

3

Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

Martin D, Müller J, Schenk T, Arruda TM, Kumar A, Strelcov E, Yurchuk E, Müller S, Pohl D, Schröder U, Kalinin SV, Mikolajick T. Martin D, et al. Among authors: schenk t. Adv Mater. 2014 Dec 23;26(48):8198-202. doi: 10.1002/adma.201403115. Epub 2014 Oct 28. Adv Mater. 2014. PMID: 25352107

4

Electric field cycling behavior of ferroelectric hafnium oxide.

Schenk T, Schroeder U, Pešić M, Popovici M, Pershin YV, Mikolajick T. Schenk T, et al. ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19744-51. doi: 10.1021/am504837r. Epub 2014 Nov 14. ACS Appl Mater Interfaces. 2014. PMID: 25365475

5

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf _xZr_{(1- x)}O₂ Ultrathin Capacitors.

Stolichnov I, Cavalieri M, Colla E, Schenk T, Mittmann T, Mikolajick T, Schroeder U, Ionescu AM. Stolichnov I, et al. Among authors: schenk t. ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30514-30521. doi: 10.1021/acsami.8b07988. Epub 2018 Aug 27. ACS Appl Mater Interfaces. 2018. PMID: 30105905

6

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO₂ Capacitors.

Buragohain P, Erickson A, Kariuki P, Mittmann T, Richter C, Lomenzo PD, Lu H, Schenk T, Mikolajick T, Schroeder U, Gruverman A. Buragohain P, et al. Among authors: schenk t. ACS Appl Mater Interfaces. 2019 Sep 25;11(38):35115-35121. doi: 10.1021/acsami.9b11146. Epub 2019 Sep 10. ACS Appl Mater Interfaces. 2019. PMID: 31460741

7

Memory technology-a primer for material scientists.

Schenk T, Pešić M, Slesazeck S, Schroeder U, Mikolajick T. Schenk T, et al. Rep Prog Phys. 2020 Aug;83(8):086501. doi: 10.1088/1361-6633/ab8f86. Epub 2020 May 1. Rep Prog Phys. 2020. PMID: 32357345

8

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment.

Park MH, Lee YH, Kim HJ, Schenk T, Lee W, Kim KD, Fengler FPG, Mikolajick T, Schroeder U, Hwang CS. Park MH, et al. Among authors: schenk t. Nanoscale. 2017 Jul 20;9(28):9973-9986. doi: 10.1039/c7nr02121f. Nanoscale. 2017. PMID: 28681890

9

Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy.

Buragohain P, Lu H, Richter C, Schenk T, Kariuki P, Glinsek S, Funakubo H, Íñiguez J, Defay E, Schroeder U, Gruverman A. Buragohain P, et al. Among authors: schenk t. Adv Mater. 2022 Nov;34(47):e2206237. doi: 10.1002/adma.202206237. Epub 2022 Oct 21. Adv Mater. 2022. PMID: 36210741

10

Dynamic leakage current compensation revisited.

Schenk T, Schroeder U, Mikolajick T. Schenk T, et al. IEEE Trans Ultrason Ferroelectr Freq Control. 2015 Mar;62(3):596-9. doi: 10.1109/TUFFC.2014.006774. IEEE Trans Ultrason Ferroelectr Freq Control. 2015. PMID: 25768825

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