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GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers.
Ballabio A, Bietti S, Scaccabarozzi A, Esposito L, Vichi S, Fedorov A, Vinattieri A, Mannucci C, Biccari F, Nemcsis A, Toth L, Miglio L, Gurioli M, Isella G, Sanguinetti S. Ballabio A, et al. Among authors: scaccabarozzi a. Sci Rep. 2019 Nov 26;9(1):17529. doi: 10.1038/s41598-019-53949-x. Sci Rep. 2019. PMID: 31772248 Free PMC article.
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si.
Salvalaglio M, Bergamaschini R, Isa F, Scaccabarozzi A, Isella G, Backofen R, Voigt A, Montalenti F, Capellini G, Schroeder T, von Känel H, Miglio L. Salvalaglio M, et al. Among authors: scaccabarozzi a. ACS Appl Mater Interfaces. 2015 Sep 2;7(34):19219-25. doi: 10.1021/acsami.5b05054. Epub 2015 Aug 20. ACS Appl Mater Interfaces. 2015. PMID: 26252761 Free article.
Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon.
Vettori M, Piazza V, Cattoni A, Scaccabarozzi A, Patriarche G, Regreny P, Chauvin N, Botella C, Grenet G, Penuelas J, Fave A, Tchernycheva M, Gendry M. Vettori M, et al. Among authors: scaccabarozzi a. Nanotechnology. 2019 Feb 22;30(8):084005. doi: 10.1088/1361-6528/aaf3fe. Epub 2018 Nov 26. Nanotechnology. 2019. PMID: 30524074
Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.
Chen HL, Himwas C, Scaccabarozzi A, Rale P, Oehler F, Lemaître A, Lombez L, Guillemoles JF, Tchernycheva M, Harmand JC, Cattoni A, Collin S. Chen HL, et al. Among authors: scaccabarozzi a. Nano Lett. 2017 Nov 8;17(11):6667-6675. doi: 10.1021/acs.nanolett.7b02620. Epub 2017 Oct 23. Nano Lett. 2017. PMID: 29035545
25 results