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Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires.
Zhang W, Yang F, Messing ME, Mergenthaler K, Pistol ME, Deppert K, Samuelson L, Magnusson MH, Yartsev A. Zhang W, et al. Among authors: samuelson l. Nanotechnology. 2016 Nov 11;27(45):455704. doi: 10.1088/0957-4484/27/45/455704. Epub 2016 Oct 7. Nanotechnology. 2016. PMID: 27713183
Excitons bound to nitrogen pairs in GaAs.
Liu X, Pistol M, Samuelson L. Liu X, et al. Among authors: samuelson l. Phys Rev B Condens Matter. 1990 Oct 15;42(12):7504-7512. doi: 10.1103/physrevb.42.7504. Phys Rev B Condens Matter. 1990. PMID: 9994896 No abstract available.
Donor states in GaAs under hydrostatic pressure.
Liu X, Samuelson L, Pistol M, Gerling M, Nilsson S. Liu X, et al. Among authors: samuelson l. Phys Rev B Condens Matter. 1990 Dec 15;42(18):11791-11800. doi: 10.1103/physrevb.42.11791. Phys Rev B Condens Matter. 1990. PMID: 9995487 No abstract available.
Properties of thin strained layers of GaAs grown on InP.
Pistol M, Gerling M, Hessman D, Samuelson L. Pistol M, et al. Among authors: samuelson l. Phys Rev B Condens Matter. 1992 Feb 15;45(7):3628-3635. doi: 10.1103/physrevb.45.3628. Phys Rev B Condens Matter. 1992. PMID: 10001943 No abstract available.
Structural properties of <111>B -oriented III-V nanowires.
Johansson J, Karlsson LS, Svensson CP, Mårtensson T, Wacaser BA, Deppert K, Samuelson L, Seifert W. Johansson J, et al. Among authors: samuelson l. Nat Mater. 2006 Jul;5(7):574-80. doi: 10.1038/nmat1677. Epub 2006 Jun 18. Nat Mater. 2006. PMID: 16783358
417 results