Salfi J - Search Results

1

Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals.

Salfi J, Paradiso N, Roddaro S, Heun S, Nair SV, Savelyev IG, Blumin M, Beltram F, Ruda HE. Salfi J, et al. ACS Nano. 2011 Mar 22;5(3):2191-9. doi: 10.1021/nn1033967. Epub 2011 Feb 15. ACS Nano. 2011. PMID: 21322642

2

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

Salfi J, Savelyev IG, Blumin M, Nair SV, Ruda HE. Salfi J, et al. Nat Nanotechnol. 2010 Oct;5(10):737-41. doi: 10.1038/nnano.2010.180. Epub 2010 Sep 19. Nat Nanotechnol. 2010. PMID: 20852638

3

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions.

Sun Y, Rusli, Yu M, Salfi J, Souza C, Ruda HE, Singh N, Lin FK, Lo P, Kwong DL. Sun Y, et al. Among authors: salfi j. Opt Express. 2011 Mar 14;19(6):5464-9. doi: 10.1364/oe.19.005464. Opt Express. 2011. PMID: 21560445 Free article.

4

Scanned Single-Electron Probe inside a Silicon Electronic Device.

Ng KSH, Voisin B, Johnson BC, McCallum JC, Salfi J, Rogge S. Ng KSH, et al. Among authors: salfi j. ACS Nano. 2020 Aug 25;14(8):9449-9455. doi: 10.1021/acsnano.0c00736. Epub 2020 Jun 15. ACS Nano. 2020. PMID: 32510926

5

Probing the spin states of a single acceptor atom.

van der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S. van der Heijden J, et al. Among authors: salfi j. Nano Lett. 2014 Mar 12;14(3):1492-6. doi: 10.1021/nl4047015. Epub 2014 Mar 3. Nano Lett. 2014. PMID: 24571637

6

Engineering long spin coherence times of spin-orbit qubits in silicon.

Kobayashi T, Salfi J, Chua C, van der Heijden J, House MG, Culcer D, Hutchison WD, Johnson BC, McCallum JC, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Simmons MY, Rogge S. Kobayashi T, et al. Among authors: salfi j. Nat Mater. 2021 Jan;20(1):38-42. doi: 10.1038/s41563-020-0743-3. Epub 2020 Jul 20. Nat Mater. 2021. PMID: 32690913

7

Spatially resolved resonant tunneling on single atoms in silicon.

Voisin B, Salfi J, Bocquel J, Rahman R, Rogge S. Voisin B, et al. Among authors: salfi j. J Phys Condens Matter. 2015 Apr 22;27(15):154203. doi: 10.1088/0953-8984/27/15/154203. Epub 2015 Mar 18. J Phys Condens Matter. 2015. PMID: 25782866

8

Spatial metrology of dopants in silicon with exact lattice site precision.

Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Usman M, et al. Among authors: salfi j. Nat Nanotechnol. 2016 Sep;11(9):763-8. doi: 10.1038/nnano.2016.83. Epub 2016 Jun 6. Nat Nanotechnol. 2016. PMID: 27271965

9

Quantum computing with acceptor spins in silicon.

Salfi J, Tong M, Rogge S, Culcer D. Salfi J, et al. Nanotechnology. 2016 Jun 17;27(24):244001. doi: 10.1088/0957-4484/27/24/244001. Epub 2016 May 11. Nanotechnology. 2016. PMID: 27171901

10

Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon.

Salfi J, Mol JA, Culcer D, Rogge S. Salfi J, et al. Phys Rev Lett. 2016 Jun 17;116(24):246801. doi: 10.1103/PhysRevLett.116.246801. Epub 2016 Jun 14. Phys Rev Lett. 2016. PMID: 27367400

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