Salahuddin S - Search Results

1

Progress, challenges, and opportunities in two-dimensional materials beyond graphene.

Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, Salahuddin S, Shan J, Shi L, Spencer MG, Terrones M, Windl W, Goldberger JE. Butler SZ, et al. Among authors: salahuddin s. ACS Nano. 2013 Apr 23;7(4):2898-926. doi: 10.1021/nn400280c. Epub 2013 Mar 26. ACS Nano. 2013. PMID: 23464873 Review.

2

Accelerated Ultrafast Magnetization Dynamics at Graphene/CoGd Interfaces.

Mondal S, Lin Y, Polley D, Su C, Zettl A, Salahuddin S, Bokor J. Mondal S, et al. Among authors: salahuddin s. ACS Nano. 2022 Jun 28;16(6):9620-9630. doi: 10.1021/acsnano.2c02899. Epub 2022 Jun 13. ACS Nano. 2022. PMID: 35695490

3

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS₂ Transistors.

McGuire FA, Lin YC, Price K, Rayner GB, Khandelwal S, Salahuddin S, Franklin AD. McGuire FA, et al. Among authors: salahuddin s. Nano Lett. 2017 Aug 9;17(8):4801-4806. doi: 10.1021/acs.nanolett.7b01584. Epub 2017 Jul 12. Nano Lett. 2017. PMID: 28691824

4

How good can monolayer MoS₂ transistors be?

Yoon Y, Ganapathi K, Salahuddin S. Yoon Y, et al. Among authors: salahuddin s. Nano Lett. 2011 Sep 14;11(9):3768-73. doi: 10.1021/nl2018178. Epub 2011 Aug 2. Nano Lett. 2011. PMID: 21790188

5

Dense electron system from gate-controlled surface metal-insulator transition.

Liu K, Fu D, Cao J, Suh J, Wang KX, Cheng C, Ogletree DF, Guo H, Sengupta S, Khan A, Yeung CW, Salahuddin S, Deshmukh MM, Wu J. Liu K, et al. Among authors: salahuddin s. Nano Lett. 2012 Dec 12;12(12):6272-7. doi: 10.1021/nl303379t. Epub 2012 Nov 26. Nano Lett. 2012. PMID: 23163634

6

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Gao W, Khan A, Marti X, Nelson C, Serrao C, Ravichandran J, Ramesh R, Salahuddin S. Gao W, et al. Among authors: salahuddin s. Nano Lett. 2014 Oct 8;14(10):5814-9. doi: 10.1021/nl502691u. Epub 2014 Sep 30. Nano Lett. 2014. PMID: 25244689

7

Real-time observation of local strain effects on nonvolatile ferroelectric memory storage mechanisms.

Winkler CR, Jablonski ML, Ashraf K, Damodaran AR, Jambunathan K, Hart JL, Wen JG, Miller DJ, Martin LW, Salahuddin S, Taheri ML. Winkler CR, et al. Among authors: salahuddin s. Nano Lett. 2014 Jun 11;14(6):3617-22. doi: 10.1021/nl501304e. Epub 2014 May 16. Nano Lett. 2014. PMID: 24801618

8

Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films.

Khan AI, Marti X, Serrao C, Ramesh R, Salahuddin S. Khan AI, et al. Among authors: salahuddin s. Nano Lett. 2015 Apr 8;15(4):2229-34. doi: 10.1021/nl503806p. Epub 2015 Mar 5. Nano Lett. 2015. PMID: 25734797

9

Interface Engineering of Domain Structures in BiFeO₃ Thin Films.

Chen D, Chen Z, He Q, Clarkson JD, Serrao CR, Yadav AK, Nowakowski ME, Fan Z, You L, Gao X, Zeng D, Chen L, Borisevich AY, Salahuddin S, Liu JM, Bokor J. Chen D, et al. Among authors: salahuddin s. Nano Lett. 2017 Jan 11;17(1):486-493. doi: 10.1021/acs.nanolett.6b04512. Epub 2016 Dec 9. Nano Lett. 2017. PMID: 27935317

10

Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

Salahuddin S, Datta S. Salahuddin S, et al. Nano Lett. 2008 Feb;8(2):405-10. doi: 10.1021/nl071804g. Epub 2007 Dec 6. Nano Lett. 2008. PMID: 18052402

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