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Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling.
Nanomaterials (Basel). 2020 Jun 26;10(6):1247. doi: 10.3390/nano10061247.
Nanomaterials (Basel). 2020.
PMID: 32604948
Free PMC article.
Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.
Kowalczyk P, Hippert F, Bernier N, Mocuta C, Sabbione C, Batista-Pessoa W, Noé P.
Kowalczyk P, et al. Among authors: sabbione c.
Small. 2018 Jun;14(24):e1704514. doi: 10.1002/smll.201704514. Epub 2018 May 14.
Small. 2018.
PMID: 29761644
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Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.
Dory JB, Castro-Chavarria C, Verdy A, Jager JB, Bernard M, Sabbione C, Tessaire M, Fédéli JM, Coillet A, Cluzel B, Noé P.
Dory JB, et al. Among authors: sabbione c.
Sci Rep. 2020 Jul 17;10(1):11894. doi: 10.1038/s41598-020-67377-9.
Sci Rep. 2020.
PMID: 32681142
Free PMC article.
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Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5.
Luong MA, Cherkashin N, Pecassou B, Sabbione C, Mazen F, Claverie A.
Luong MA, et al. Among authors: sabbione c.
Nanomaterials (Basel). 2021 Jun 30;11(7):1729. doi: 10.3390/nano11071729.
Nanomaterials (Basel). 2021.
PMID: 34209198
Free PMC article.
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