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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy.
Daudin B, Donatini F, Bougerol C, Gayral B, Bellet-Amalric E, Vermeersch R, Feldberg N, Rouvière JL, Recio Carretero MJ, Garro N, Garcia-Orrit S, Cros A. Daudin B, et al. Among authors: rouviere jl. Nanotechnology. 2021 Jan 8;32(2):025601. doi: 10.1088/1361-6528/abb6a5. Nanotechnology. 2021. PMID: 32906087
Hidden defects in silicon nanowires.
den Hertog MI, Cayron C, Gentile P, Dhalluin F, Oehler F, Baron T, Rouviere JL. den Hertog MI, et al. Among authors: rouviere jl. Nanotechnology. 2012 Jan 20;23(2):025701. doi: 10.1088/0957-4484/23/2/025701. Nanotechnology. 2012. PMID: 22166492
InGaN nanowires with high InN molar fraction: growth, structural and optical properties.
Zhang X, Lourenço-Martins H, Meuret S, Kociak M, Haas B, Rouvière JL, Jouneau PH, Bougerol C, Auzelle T, Jalabert D, Biquard X, Gayral B, Daudin B. Zhang X, et al. Among authors: rouviere jl. Nanotechnology. 2016 May 13;27(19):195704. doi: 10.1088/0957-4484/27/19/195704. Epub 2016 Apr 4. Nanotechnology. 2016. PMID: 27041669
Growth mechanism of InGaN nano-umbrellas.
Zhang X, Haas B, Rouvière JL, Robin E, Daudin B. Zhang X, et al. Among authors: rouviere jl. Nanotechnology. 2016 Nov 11;27(45):455603. doi: 10.1088/0957-4484/27/45/455603. Epub 2016 Oct 11. Nanotechnology. 2016. PMID: 27727147
Ultrathin GaN quantum wells in AlN nanowires for UV-C emission.
Vermeersch R, Jacopin G, Castioni F, Rouvière JL, García-Cristóbal A, Cros A, Pernot J, Daudin B. Vermeersch R, et al. Among authors: rouviere jl. Nanotechnology. 2023 Apr 21;34(27). doi: 10.1088/1361-6528/accaeb. Nanotechnology. 2023. PMID: 37023726
40 results