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Standards for the Characterization of Endurance in Resistive Switching Devices.
Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: rana v. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.
Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
Wedig A, Luebben M, Cho DY, Moors M, Skaja K, Rana V, Hasegawa T, Adepalli KK, Yildiz B, Waser R, Valov I. Wedig A, et al. Among authors: rana v. Nat Nanotechnol. 2016 Jan;11(1):67-74. doi: 10.1038/nnano.2015.221. Epub 2015 Sep 28. Nat Nanotechnol. 2016. PMID: 26414197
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion.
Ambrosi E, Bartlett P, Berg AI, Brivio S, Burr G, Deswal S, Deuermeier J, Haga MA, Kiazadeh A, Kissling G, Kozicki M, Foroutan-Nejad C, Gale E, Gonzalez-Velo Y, Goossens A, Goux L, Hasegawa T, Hilgenkamp H, Huang R, Ibrahim S, Ielmini D, Kenyon AJ, Kolosov V, Li Y, Majumdar S, Milano G, Prodromakis T, Raeishosseini N, Rana V, Ricciardi C, Santamaria M, Shluger A, Valov I, Waser R, Williams RS, Wouters D, Yang Y, Zaffora A. Ambrosi E, et al. Among authors: rana v. Faraday Discuss. 2019 Feb 18;213(0):115-150. doi: 10.1039/c8fd90059k. Faraday Discuss. 2019. PMID: 30663725 No abstract available.
363 results