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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.
Schroeder U, Richter C, Park MH, Schenk T, Pešić M, Hoffmann M, Fengler FPG, Pohl D, Rellinghaus B, Zhou C, Chung CC, Jones JL, Mikolajick T. Schroeder U, et al. Among authors: pohl d. Inorg Chem. 2018 Mar 5;57(5):2752-2765. doi: 10.1021/acs.inorgchem.7b03149. Epub 2018 Feb 15. Inorg Chem. 2018. PMID: 29446630
Local band gap measurements by VEELS of thin film solar cells.
Keller D, Buecheler S, Reinhard P, Pianezzi F, Pohl D, Surrey A, Rellinghaus B, Erni R, Tiwari AN. Keller D, et al. Among authors: pohl d. Microsc Microanal. 2014 Aug;20(4):1246-53. doi: 10.1017/S1431927614000543. Epub 2014 Apr 2. Microsc Microanal. 2014. PMID: 24690441
Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.
Martin D, Müller J, Schenk T, Arruda TM, Kumar A, Strelcov E, Yurchuk E, Müller S, Pohl D, Schröder U, Kalinin SV, Mikolajick T. Martin D, et al. Among authors: pohl d. Adv Mater. 2014 Dec 23;26(48):8198-202. doi: 10.1002/adma.201403115. Epub 2014 Oct 28. Adv Mater. 2014. PMID: 25352107
615 results