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Year | Number of Results |
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2021 | 2 |
2023 | 1 |
2024 | 0 |
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Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
Micromachines (Basel). 2023 Aug 11;14(8):1582. doi: 10.3390/mi14081582.
Micromachines (Basel). 2023.
PMID: 37630118
Free PMC article.
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration.
Hsu LH, Lai YY, Tu PT, Langpoklakpam C, Chang YT, Huang YW, Lee WC, Tzou AJ, Cheng YJ, Lin CH, Kuo HC, Chang EY.
Hsu LH, et al. Among authors: tu pt.
Micromachines (Basel). 2021 Sep 27;12(10):1159. doi: 10.3390/mi12101159.
Micromachines (Basel). 2021.
PMID: 34683210
Free PMC article.
Review.
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The Evolution of Manufacturing Technology for GaN Electronic Devices.
Liu AC, Tu PT, Langpoklakpam C, Huang YW, Chang YT, Tzou AJ, Hsu LH, Lin CH, Kuo HC, Chang EY.
Liu AC, et al. Among authors: tu pt.
Micromachines (Basel). 2021 Jun 23;12(7):737. doi: 10.3390/mi12070737.
Micromachines (Basel). 2021.
PMID: 34201620
Free PMC article.
Review.
Item in Clipboard
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