Peng LM - Search Results

1

Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers.

Zhou J, Liu L, Shi H, Zhu M, Cheng X, Ren L, Ding L, Peng LM, Zhang Z. Zhou J, et al. Among authors: peng lm. ACS Appl Mater Interfaces. 2021 Aug 11;13(31):37475-37482. doi: 10.1021/acsami.1c07782. Epub 2021 Aug 2. ACS Appl Mater Interfaces. 2021. PMID: 34340306

2

Stability of carbon nanotubes: how small can they be?

Peng LM, Zhang ZL, Xue ZQ, Wu QD, Gu ZN, Pettifor DG. Peng LM, et al. Phys Rev Lett. 2000 Oct 9;85(15):3249-52. doi: 10.1103/PhysRevLett.85.3249. Phys Rev Lett. 2000. PMID: 11019313

3

Growth of compound single- and multi-walled carbon nanotubes.

Peng LM, Shi ZJ, Zhang ZL, Ouyang L, Gu ZN, Xue ZQ, Wu QD. Peng LM, et al. Ultramicroscopy. 2004 Jan;98(2-4):195-200. doi: 10.1016/j.ultramic.2003.08.012. Ultramicroscopy. 2004. PMID: 15046799

4

A comparative study on SWCNT and DWCNT field-effect transistors.

Liang XL, Wang S, Duan XJ, Zhang ZY, Chen Q, Zhang J, Peng LM. Liang XL, et al. Among authors: peng lm. J Nanosci Nanotechnol. 2007 Apr-May;7(4-5):1568-72. doi: 10.1166/jnn.2007.340. J Nanosci Nanotechnol. 2007. PMID: 17450927

5

Quantitative fitting of nonlinear current-voltage curves and parameter retrieval of semiconducting nanowire, nanotube and nanoribbon devices.

Liu Y, Zhang ZY, Hu YF, Jin CH, Peng LM. Liu Y, et al. Among authors: peng lm. J Nanosci Nanotechnol. 2008 Jan;8(1):252-8. J Nanosci Nanotechnol. 2008. PMID: 18468068

6

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

7

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

Zhang Z, Wang S, Wang Z, Ding L, Pei T, Hu Z, Liang X, Chen Q, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p. ACS Nano. 2009. PMID: 19845337

8

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Ding L, Wang S, Zhang Z, Zeng Q, Wang Z, Pei T, Yang L, Liang X, Shen J, Chen Q, Cui R, Li Y, Peng LM. Ding L, et al. Among authors: peng lm. Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243. Nano Lett. 2009. PMID: 19995085

9

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Wang Z, Xu H, Zhang Z, Wang S, Ding L, Zeng Q, Yang L, Pei T, Liang X, Gao M, Peng LM. Wang Z, et al. Among authors: peng lm. Nano Lett. 2010 Jun 9;10(6):2024-30. doi: 10.1021/nl100022u. Nano Lett. 2010. PMID: 20455575

10

Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler.

Wang Z, Ding L, Pei T, Zhang Z, Wang S, Yu T, Ye X, Peng F, Li Y, Peng LM. Wang Z, et al. Among authors: peng lm, peng f. Nano Lett. 2010 Sep 8;10(9):3648-55. doi: 10.1021/nl102111j. Nano Lett. 2010. PMID: 20677775

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